PSMN014-60HSX

Overview

The PSMN014-60HS is a dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. It features a drain-source voltage of 60 V, a continuous drain current of 30 A at Tmb = 25 °C, and a total power dissipation of 53 W. The typical drain-source on-state resistance is 14 mΩ at VGS = 10 V and ID = 10 A. The device supports a junction temperature range from -55 °C to 175 °C and includes copper-clip solder die attach for high reliability.

Feature Summary

• Dual MOSFET configuration within a single compact package
• Repetitive avalanche rated for robust performance under transient conditions
• High reliability LFPAK56D package with copper-clip solder die attach
• Qualified for operation up to 175 °C junction temperature

Applications

• Brushless DC motor control
• DC-to-DC converters
• High-performance synchronous rectification
• High performance and high efficiency server power supply

Procurement Notes

Verify the specific ordering suffix against the official Nexperia datasheet to ensure correct packaging and tape-and-reel specifications. Confirm that the component meets the required thermal management constraints for your application, as continuous current is limited by the mounting base temperature. Ensure design compatibility with the LFPAK56D footprint dimensions provided in the package outline section.

Selection Notes

Select this component when a dual N-channel configuration is required in a space-constrained design. The low on-state resistance and high current capability make it suitable for efficient power conversion. Consider the thermal resistance characteristics and the need for adequate heat sinking to maintain junction temperatures within the specified 175 °C limit during operation.

Part Context

This part belongs to Nexperia's standard level N-channel MOSFET portfolio utilizing TrenchMOS technology. It is designed for industrial, communications, and power supply equipment where high efficiency and compact form factors are critical. The dual configuration allows for cost-effective implementation of half-bridge or synchronous rectifier topologies.

Replacement Considerations

Consult the official Nexperia replacement guide for verified substitutes. Ensure any alternative maintains the same voltage rating, current capacity, and package type to fit existing footprints without redesign.

FAQ

What is the maximum non-repetitive drain-source avalanche energy?

The maximum non-repetitive drain-source avalanche energy is 55 mJ when ID = 30 A, Vsup ≤ 60 V, VGS = 10 V, and initial junction temperature is 25 °C.

How does the on-state resistance vary with temperature?

The typical drain-source on-state resistance increases from 11.3 mΩ at 25 °C to 25.3 mΩ at 175 °C under standard test conditions (VGS = 10 V, ID = 10 A).

Is this component automotive qualified?

No, unless explicitly stated otherwise in the data sheet, this product is not automotive qualified and is not suitable for use in automotive applications.