PSMN2R0-60ES,127

Single FETs, MOSFETs Overview

The Nexperia PSMN2R0-60ES,127 is a standard level N-channel MOSFET housed in an I2PAK (SOT226) package. It features a drain-source voltage of 60 V and a continuous drain current of 120 A at Tmb = 25 °C. The device exhibits a typical on-state resistance of 2.2 mΩ at VGS = 10 V and ID = 25 A. Total gate charge is typically 137 nC. It supports junction temperatures up to 175 °C with a total power dissipation of 338 W.

Single FETs, MOSFETs Feature Summary

• High efficiency achieved through low switching and conduction losses
• Compatible with standard level gate drive sources
• Robust construction designed for demanding industrial applications

Single FETs, MOSFETs Applications

• DC-to-DC converters
• Load switching
• Motor control
• Server power supplies

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix

Single FETs, MOSFETs Selection Notes

Select this component for high-current applications requiring low on-resistance within a 60 V limit. The I2PAK package provides robust thermal performance suitable for mounting base cooling. Ensure gate drive circuits align with standard level requirements rather than logic level specifications.

Single FETs, MOSFETs Part Context

This part belongs to Nexperia's NextPower S series of standard level N-channel MOSFETs. These devices utilize advanced trench technology to optimize the balance between RDS(on) and gate charge. The I2PAK package offers a cost-effective solution for medium-power applications compared to larger TO-220 variants.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with PSMN2R0-60PS for identical electrical characteristics in a TO-220 package. Verify pinout compatibility and thermal resistance differences when substituting packages.