PSMN8R5-40HSX

Overview

The Nexperia PSMN8R5-40HSX is a dual standard level N-channel MOSFET housed in an LFPAK56D (Dual Power-SO8) package utilizing TrenchMOS technology. It features a drain-source voltage of 40 V and a continuous drain current of 30 A at a mounting base temperature of 25 °C. The typical drain-source on-state resistance is 8.5 mΩ at VGS = 10 V and ID = 15 A, rising to 16.7 mΩ maximum at 175 °C. Total power dissipation reaches 53 W under specified conditions. The device supports junction temperatures from -55 °C to 175 °C and includes repetitive avalanche rating capabilities.

Feature Summary

• Dual MOSFET configuration within a single compact package
• Repetitive avalanche rated for robust operation
• High reliability construction with copper-clip and solder die attach
• Qualified for operation up to 175 °C junction temperature

Applications

• Brushless DC motor control
• DC-to-DC converters
• High-performance synchronous rectification
• High performance and high efficiency server power supply

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm exact packaging and reel specifications. Confirm that the LFPAK56D footprint matches your PCB design guidelines. Ensure thermal management strategies account for the 53 W total power dissipation limit at 25 °C mounting base temperature. Check for any recent product status updates or obsolescence notices directly from Nexperia before finalizing procurement plans.

Selection Notes

Select this component when a dual N-channel configuration is required in a space-constrained Dual Power-SO8 form factor. The 8.5 mΩ on-state resistance offers low conduction losses for standard level gate drive applications. Consider the 175 °C qualification for thermally demanding environments. Verify that the 40 V breakdown voltage aligns with your system's maximum operating voltages and transient requirements.

Part Context

This device belongs to Nexperia's standard level N-channel MOSFET portfolio, leveraging TrenchMOS technology for optimized performance. It is designed as a dual solution to save board space compared to using two separate single MOSFETs. The LFPAK56D package provides enhanced thermal performance through its exposed pad and copper-clip construction, suitable for high-efficiency power switching applications.

Replacement Considerations

Consult Nexperia's official cross-reference tools for verified substitutes. Single-channel equivalents like the PSMN8R5-40YS may require two units to match functionality. Ensure any replacement maintains the LFPAK56D footprint or requires PCB redesign. Verify that alternative parts meet the same 175 °C qualification and avalanche ruggedness standards.

FAQ

What is the maximum non-repetitive drain-source avalanche energy?

The maximum non-repetitive drain-source avalanche energy is 84 mJ, tested at ID = 30 A, Vsup ≤ 40 V, VGS = 10 V, and initial junction temperature of 25 °C.

How does the on-state resistance vary with temperature?

At VGS = 10 V and ID = 15 A, the typical RDS(on) is 8.5 mΩ at 25 °C and increases to a maximum of 16.7 mΩ at 175 °C junction temperature.

Is this device automotive qualified?

No, unless explicitly stated otherwise in the data sheet, this product is not suitable for automotive use and is not qualified or tested according to automotive testing requirements.