PTAB182002TCV2R250XUMA1

Overview

The PTAB182002TC is a 180-watt LDMOS FET designed for multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. It features asymmetric Doherty design with main and peak P1dB of 70 W and 120 W respectively. The device operates at 28 V with a drain-source breakdown voltage of 65 V. DC characteristics include an on-state resistance of 0.15 Ω (main) and 0.09 Ω (peak). RF performance under two-carrier WCDMA conditions yields a gain of 14.8 dB typical and drain efficiency of 47% typical.

Feature Summary

• Asymmetric Doherty architecture supporting main and peak amplification paths
• Broadband internal matching integrated within the device structure
• Integrated electrostatic discharge protection circuitry
• Earless copper flange package providing enhanced thermal dissipation

Applications

• Multi-standard cellular power amplifier modules
• WCDMA base station transmitter stages
• Doherty power amplifier configurations

Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm package variations or tape-and-reel specifications. Ensure compatibility with existing thermal management designs due to the earless copper flange configuration. Confirm RoHS compliance status through current manufacturer declarations before finalizing procurement orders.

Selection Notes

Select this component for high-power cellular infrastructure requiring efficient linear amplification in the 1805-1880 MHz range. Evaluate thermal resistance requirements carefully given the 180 W output capability. Consider the integrated ESD protection and internal matching when designing input and output networks for optimal system performance.

Part Context

This part belongs to Infineon's thermally-enhanced high-power RF LDMOS FET portfolio. It utilizes advanced LDMOS process technology to deliver superior reliability and thermal performance compared to standard packages. The H-49248H-4 package variant provides a robust solution for demanding RF power applications.

Replacement Considerations

PTAB182002TCV2R250XTMA1

FAQ

What is the maximum junction temperature rating?

The maximum junction temperature (Tj) is rated at 200 °C.

Does the device support high VSWR loads?

Yes, it is capable of handling 3:1 VSWR at 30 V with 50 W average output power using a one-carrier WCDMA signal with 10 dB PAR.

What are the gate voltage limits?

The gate-source voltage (VGS) range is specified from -6 V to +10 V.