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The PTAC210802FC-V1-R0 is an 80-watt LDMOS FET featuring an asymmetrical design for multi-standard cellular power amplifiers. It operates within the 1805 to 2170 MHz frequency range, delivering a typical gain of 17 dB at 2.17 GHz. The device supports a drain voltage of 28 V and provides a maximum drain current of 85 mA. Packaged in the H-37248-4 format, this thermally-enhanced component is engineered for high-power RF applications requiring robust performance in cellular infrastructure.
Verify the specific suffix -V1-R0 against official MACOM documentation to confirm exact manufacturing revision and tape-and-reel configuration. Ensure compatibility with existing thermal management solutions due to the high-power dissipation characteristics inherent to 80-watt LDMOS devices. Cross-reference the H-37248-4 package dimensions with PCB layout requirements prior to procurement.
Select this component when designing cellular power amplifiers requiring 80-watt output power within the 1805 to 2170 MHz band. The asymmetrical design offers specific advantages for multi-standard operation compared to symmetrical alternatives. Evaluate thermal resistance requirements carefully, as the H-37248-4 package necessitates adequate heat sinking to maintain reliability under continuous 28 V drain bias conditions.
This part belongs to MACOM's portfolio of thermally-enhanced high-power RF LDMOS transistors. The PTAC210802FC series is specifically engineered for demanding cellular infrastructure applications. The -V1-R0 designation indicates a specific version and packaging configuration within this family, targeting modern multi-standard base station architectures that require high linearity and power efficiency.
Public confirmed substitute part numbers are not available in the provided documentation. Verify functional equivalence with other MACOM LDMOS devices only through direct datasheet comparison of pinout, electrical parameters, and thermal specifications.