SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The PTAC240502FC-V1-R0 is a dual N-channel RF LDMOS FET manufactured by MACOM. It operates within the 2.3 GHz to 2.4 GHz frequency range, delivering an output power of 50 W with a gain of 14.3 dB. The device features a Vds breakdown voltage of 65 V and an Rds(on) of 400 mOhms. It supports a maximum operating temperature of +225 C and utilizes an H-37248-4 SMD/SMT package.
Verify component authenticity through authorized MACOM distributors or direct manufacturer channels. Confirm RoHS compliance status via official datasheets. Check for Product Change Notifications (PCN) dated April 25, 2024, regarding potential specification updates. Ensure supply chain partners provide valid traceability documentation for quality assurance purposes.
Select this component for applications requiring high linearity and power density in the 2.4 GHz band. Evaluate thermal management requirements given the +225 C maximum junction temperature rating. Compare against alternative LDMOS devices based on specific gain and efficiency targets. Ensure PCB layout accommodates the H-37248-4 surface mount footprint for optimal RF performance.
This part belongs to MACOM's portfolio of RF MOSFET transistors designed for high-power amplification. It complements other wideband and narrowband RF solutions offered by the manufacturer. The device represents silicon-based technology optimized for robust performance in demanding radio frequency environments.
The product status is listed as NRND (Not Recommended for New Designs). Engineers should consult MACOM for current recommended alternatives. Verify pinout compatibility and electrical specifications before substituting with any cross-reference parts.
The maximum operating temperature is +225 C.
No, the lifecycle status is NRND, indicating it is not recommended for new designs.
It uses an H-37248-4 surface mount (SMD/SMT) package.