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The PTAC260302FC-V1-R0 is a dual N-channel RF LDMOS FET manufactured by MACOM Technology Solutions. Designed for multi-standard cellular power amplifier applications, it operates within the 2.62 GHz to 2.69 GHz frequency band. Key electrical parameters include a drain-source breakdown voltage of 65 V, an on-resistance of 800 mΩ, and a gain of 15.5 dB. The device delivers 30 W of output power and supports a maximum operating temperature of +225°C. It utilizes an H-37248H-4 surface-mount package.
Verify the specific ordering suffix and package variant against the official MACOM datasheet to ensure compatibility with your PCB footprint and assembly process. Confirm that the requested quantity aligns with the manufacturer's standard factory packaging specifications. Request updated technical documentation directly from authorized distributors to validate current production status and lead times prior to finalizing procurement orders.
Select this component when designing power amplifiers requiring 30 W output in the 2.6 GHz LTE/5G bands. Ensure the design accommodates the H-37248H-4 SMD package dimensions and thermal requirements. Verify that the system can handle the 65 V breakdown voltage and that the biasing circuitry supports the dual N-channel configuration for optimal linearity and efficiency in cellular applications.
This part belongs to MACOM's portfolio of RF LDMOS transistors, which are widely used in telecommunications infrastructure. These components bridge the gap between low-level signal processing and high-power transmission, enabling efficient coverage in modern wireless networks. The PTAC series specifically targets the demanding power and thermal environments found in contemporary cellular base stations.
Consult MACOM's official substitution guide for direct replacements. Cross-reference pinout compatibility and thermal characteristics if considering alternative vendors. No public substitute part numbers are confirmed in available documentation.