PTF140451F V1

Overview

The PTF140451F V1 is an RF LDMOS transistor from the GOLDMOS series, designed for high-frequency applications up to 1.5 GHz. It operates at a test voltage of 28 V with a rated voltage of 65 V. The device delivers 45 W output power and provides 18 dB gain at a test current of 550 mA. Packaged in the H-31265-2 format, it features a 2-flat package with blade leads and a flange for thermal management.

Feature Summary

• LDMOS technology optimized for RF signal amplification
• High power output capability of 45 W
• Integrated flange design for efficient heat dissipation

Applications

• RF power amplification stages
• Base station transmitter modules
• Industrial radio frequency heating systems

Procurement Notes

Verify the exact suffix designation against official Infineon documentation to ensure compatibility with specific thermal and electrical requirements. Confirm that the H-31265-2 package dimensions match the intended PCB layout and mounting hardware specifications before finalizing procurement orders.

Selection Notes

Select this component when designing circuits requiring stable RF performance at 1.5 GHz with moderate power handling. The 28 V operating point suits standard telecom supply rails. Ensure the cooling solution accommodates the flange-mounted package type for reliable long-term operation under continuous wave conditions.

Part Context

This part belongs to Infineon's GOLDMOS family, which specializes in lateral double-diffused MOS structures for radio frequency applications. These devices are engineered to balance linearity, efficiency, and ruggedness for demanding wireless infrastructure environments where consistent gain and power output are critical.

Replacement Considerations

Consult official cross-reference lists for verified substitutes. Generic replacements may differ in gain flatness or thermal resistance characteristics.