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Product Detailed Parameters
- Description：RF MOSFET LDMOS 28V RFP-10
- Series：GOLDMOS®
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- Technology：LDMOS
- Frequency：1.99GHz
- Gain：16.5dB
- Voltage - Test：28 V
- Current Rating (Amps)：1µA
- Noise Figure：-
- Current - Test：180 mA
- Power - Output：10W
- Voltage - Rated：65 V
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
- Supplier Device Package：PG-RFP-10
- Configuration：-
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Overview
The PTF180101M V1 is a high-power RF LDMOS field-effect transistor from Infineon Technologies, designed for radio frequency amplification. It operates within the 1 to 2 GHz band and delivers an output power of 10W. The device features a gain of 16.5dB and a drain-source voltage rating of 28V. It utilizes the GOLDMOS® technology and is housed in the PG-RFP-10 package.
Feature Summary
- Utilizes unmatched GOLDMOS® LDMOS technology for high reliability
- Optimized for Class AB base station applications
- Designed for efficient operation in the 1 to 2 GHz frequency band
Applications
- Class AB base station amplification
- Radio frequency amplification
- Broadband RF power amplifiers
Procurement Notes
Verify the specific suffix 'V1' against official Infineon documentation to confirm exact revision status. Ensure compatibility with existing thermal management solutions due to the 10W power dissipation requirements. Confirm that the PG-RFP-10 package dimensions align with the target PCB layout before finalizing procurement orders.
Selection Notes
Select this component for applications requiring robust performance in the 1-2 GHz range. Consider the 28V drain-source voltage limit when designing power supply circuits. Evaluate the 16.5dB gain specification against system noise and signal integrity requirements. Ensure the design accommodates the specific thermal characteristics of the PG-RFP-10 package.
Part Context
This part belongs to Infineon's portfolio of high-power RF LDMOS transistors. These devices are engineered for demanding wireless infrastructure environments. The GOLDMOS® series provides enhanced ruggedness and efficiency compared to standard MOSFETs, making them suitable for critical communication base stations.
Replacement Considerations
Consult official Infineon substitution guides for verified alternatives. Cross-reference pinouts and electrical parameters carefully. Generic replacements may not match the specific GOLDMOS® performance characteristics required for base station stability.
