PTF210101M V1

Overview

The PTF210101M is a high-power RF LDMOS Field Effect Transistor from Infineon Technologies, designed for base station applications in the 2110 to 2170 MHz band. It delivers 10 W output power at P-1dB with a typical gain of 14 dB and efficiency of 50% under continuous wave conditions. The device operates at a drain-source voltage of 28 V and features integrated ESD protection compliant with Human Body Model Class 1 standards.

Feature Summary

• Integrated electrostatic discharge protection meeting Human Body Model Class 1 requirements
• Excellent thermal stability characteristics ensuring reliable operation
• Low hot carrier injection drift performance
• Capable of handling 10:1 Voltage Standing Wave Ratio at rated output power

Applications

• Class AB base station amplifiers
• WCDMA signal processing
• Broadband RF power amplification

Procurement Notes

Verify component authenticity through authorized Infineon distributors or certified partners. Confirm package integrity and marking consistency against PG-RFP-10 specifications. Ensure storage and handling procedures strictly follow ESD sensitivity guidelines to prevent damage prior to installation.

Selection Notes

Select this component for designs requiring robust RF performance within the 2110 to 2170 MHz frequency range. Evaluate thermal management capabilities based on the specified junction temperature limits and thermal resistance values. Ensure biasing circuits accommodate the required gate-source voltage and quiescent current parameters for optimal linearity.

Part Context

This part belongs to Infineon's GOLDMOS® family of high-power RF transistors. It utilizes LDMOS technology optimized for linear amplification in wireless communication infrastructure. The device is housed in a surface-mount PG-RFP-10 package suitable for automated assembly processes.

Replacement Considerations

Consult official Infineon documentation for verified substitute part numbers. Do not assume functional equivalence with other LDMOS devices without reviewing specific electrical parameter matches and pin configurations.

FAQ

What is the maximum drain-source breakdown voltage?

The maximum drain-source breakdown voltage (V(BR)DSS) is 65 V.

What is the recommended operating case temperature for DC characteristics?

DC characteristics are published at a case temperature of 70°C for thermal resistance calculations, while RF data is typically referenced at 25°C.

How does the device handle mismatched loads?

The transistor is capable of handling a 10:1 Voltage Standing Wave Ratio (VSWR) when operating at 28 V with 10 W CW output power.