PTF240101S V1

PTF240101S V1

  • Description:RF MOSFET LDMOS 28V H-32259-2
  • Series:GOLDMOS®

SKU:ec912925bc6a Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V H-32259-2
  • Series:GOLDMOS®
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:2.68GHz
  • Gain:16dB
  • Voltage - Test:28 V
  • Current Rating (Amps):1µA
  • Noise Figure:-
  • Current - Test:180 mA
  • Power - Output:10W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:H-32259-2
  • Supplier Device Package:H-32259-2
  • Configuration:-

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PTF240101S V1

Overview

The PTF240101S is a 10-watt, internally-matched GOLDMOS® FET device intended for CDMA2000 and WiMAX applications in the 2.4 to 2.7 GHz band. It features full gold metallization for excellent lifetime and reliability. The device operates with a drain-source breakdown voltage of 65 V and a junction temperature up to 200 °C. Typical CDMA2000 performance at 28 V includes an average output power of 2.0 W, gain of 16 dB, efficiency of 18%, and ACPR of –55 dBc. CW performance yields 15 W output power at P–1dB with 45% efficiency.

Feature Summary

  • Internally matched GOLDMOS® technology with full gold metallization
  • Integrated ESD protection meeting Human Body Model Class 1 minimum
  • Excellent thermal stability and low HCI drift characteristics
  • Capable of handling 10:1 VSWR at 28 V and 10 W CW output power

Applications

  • CDMA2000 base station power amplification
  • WiMAX base station power amplification
  • Broadband wireless communication systems

Procurement Notes

Verify component authenticity by checking the package marking against the datasheet outline. Confirm RoHS compliance status as indicated in the ordering information. Ensure handling precautions are strictly followed due to electrostatic discharge sensitivity. Validate that the H-32259-2 package dimensions match your PCB footprint requirements before finalizing procurement.

Selection Notes

Select this component for high-power RF applications requiring internal matching within the 2.4 to 2.7 GHz range. Consider the 65 V drain-source breakdown voltage and 200 °C junction temperature limit for thermal design. Evaluate the 16 dB typical gain and 18% efficiency for system-level power budgeting. Ensure the bias circuitry supports the specified operating gate voltage and quiescent current requirements.

Part Context

This part belongs to Infineon's GOLDMOS® family of thermally-enhanced high-power RF LDMOS FETs. These devices are engineered for robust performance in cellular infrastructure. The PTF240101S specifically targets the 2.4 to 2.7 GHz spectrum, offering a balance of high output power and linearity for modern wireless standards.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

FAQ

What is the maximum junction temperature for the PTF240101S?

The maximum junction temperature (TJ) is 200 °C.

Does the PTF240101S include internal matching?

Yes, the PTF240101S is an internally-matched device designed to simplify RF circuit integration.

What is the typical gain for CDMA2000 operation?

The typical power gain (Gps) for CDMA2000 operation is 16 dB.

PTF240101S V1PTF240101S V1

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