SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The PTF240101S is a 10-watt, internally-matched GOLDMOS® FET device intended for CDMA2000 and WiMAX applications in the 2.4 to 2.7 GHz band. It features full gold metallization for excellent lifetime and reliability. The device operates with a drain-source breakdown voltage of 65 V and a junction temperature up to 200 °C. Typical CDMA2000 performance at 28 V includes an average output power of 2.0 W, gain of 16 dB, efficiency of 18%, and ACPR of –55 dBc. CW performance yields 15 W output power at P–1dB with 45% efficiency.
Verify component authenticity by checking the package marking against the datasheet outline. Confirm RoHS compliance status as indicated in the ordering information. Ensure handling precautions are strictly followed due to electrostatic discharge sensitivity. Validate that the H-32259-2 package dimensions match your PCB footprint requirements before finalizing procurement.
Select this component for high-power RF applications requiring internal matching within the 2.4 to 2.7 GHz range. Consider the 65 V drain-source breakdown voltage and 200 °C junction temperature limit for thermal design. Evaluate the 16 dB typical gain and 18% efficiency for system-level power budgeting. Ensure the bias circuitry supports the specified operating gate voltage and quiescent current requirements.
This part belongs to Infineon's GOLDMOS® family of thermally-enhanced high-power RF LDMOS FETs. These devices are engineered for robust performance in cellular infrastructure. The PTF240101S specifically targets the 2.4 to 2.7 GHz spectrum, offering a balance of high output power and linearity for modern wireless standards.
No public confirmed substitute part numbers are available in the provided documentation.
The maximum junction temperature (TJ) is 200 °C.
Yes, the PTF240101S is an internally-matched device designed to simplify RF circuit integration.
The typical power gain (Gps) for CDMA2000 operation is 16 dB.