PTFA041501E-V4-R250

Overview

The PTFA041501E-V4-R250 is a 150-watt LDMOS FET designed for ultra-linear CDMA power amplifier applications. It operates in the 420–500 MHz frequency range and utilizes Infineon's advanced LDMOS process. The device features a thermally-enhanced ceramic open-cavity package (H-36248-2) with a slotted flange configuration. Key electrical characteristics include a drain-source breakdown voltage of 65 V, an on-state resistance of 0.07 Ω, and a junction temperature rating of 200 °C. At 470 MHz with a 28 V supply, it delivers typical gain of 21 dB and efficiency of 41% under single-carrier CDMA conditions.

Feature Summary

• Broadband internal matching network integrated for simplified circuit design
• Integrated ESD protection compliant with Human Body Model Class 1 standards
• Excellent thermal stability and low HCI drift characteristics
• Capable of handling high VSWR loads while maintaining performance

Applications

• Ultra-linear CDMA power amplifier stages
• Broadband RF power amplification systems
• High-power linear transmitter modules

Procurement Notes

Verify that the specific suffix R250 corresponds to the tape and reel shipping format containing 250 pieces per reel. Confirm the package type H-36248-2 matches the required slotted flange mechanical constraints. Ensure handling precautions for electrostatic discharge sensitive devices are strictly followed during storage and assembly processes.

Selection Notes

Select this component when designing power amplifiers requiring high linearity and broad bandwidth within the 420–500 MHz spectrum. Consider the thermal resistance of 0.42 °C/W and the 200 °C junction temperature limit for adequate heatsinking requirements. Evaluate the 65 V drain-source breakdown voltage against the maximum operating supply voltage to ensure safe margins.

Part Context

This part belongs to the PTFA041501 series manufactured by Infineon Technologies AG using their GoldMOS® technology. The 'E' variant denotes the thermally-enhanced slotted flange package (H-36248-2), distinct from the 'F' variant which uses an earless flange. The series is engineered for robust reliability in demanding RF environments.

Replacement Considerations

The PTFA041501F-V4-R250 serves as a direct functional substitute, differing only in the physical package style (earless flange H-37248-2 versus slotted flange). Mechanical layout changes are required if swapping between these two variants due to the different mounting configurations.

FAQ

What is the maximum junction temperature rating for this device?

The maximum junction temperature (TJ) rating is 200 °C.

Does the PTFA041501E-V4-R250 include built-in ESD protection?

Yes, the device includes integrated ESD protection meeting the minimum Human Body Model Class 1 standard.

What is the typical drain efficiency at 470 MHz under CW conditions?

The typical drain efficiency is 62% at 470 MHz under continuous wave (CW) conditions.