PTFA043002E V1

Overview

The PTFA043002E is a 300-watt, internally-matched, laterally-diffused GOLDMOS push-pull FET designed for analog and digital broadcast applications from 470 to 860 MHz. It operates at VDD = 32 V with an average output power of 100 W (ATSC 8VSB) or 300 W PEP. Key electrical parameters include a common source power gain of 16 dB, drain efficiency up to 41%, and first adjacent IMD below -33 dBc. The device features a maximum drain-source breakdown voltage of 65 V, junction temperature of 200 °C, and thermal resistance of 0.23 °C/W.

Feature Summary

• Thermally-enhanced package providing excellent thermal stability and low HCI drift
• Broadband internal matching optimized for 470 to 860 MHz frequency range
• Integrated ESD protection meeting Human Body Model Class 2 minimum requirements
• Full gold metallization ensuring excellent device lifetime and reliability

Applications

• Analog and digital broadcast systems
• ATSC 8VSB transmission
• COFDM applications

Procurement Notes

Verify the specific ordering suffix 'E' against official Infineon documentation to confirm RoHS compliance and Pb-free status. Ensure the procurement channel sources directly from authorized distributors to guarantee component authenticity and traceability. Confirm that the H-30275-4 flange mount package matches the mechanical design constraints of the target application.

Selection Notes

Select this component for high-power RF applications requiring broadband performance between 470 and 860 MHz. The integrated matching network simplifies circuit design compared to discrete LDMOS devices. Evaluate the 0.23 °C/W thermal resistance to ensure adequate heatsinking for the 761 W total dissipation capability. Consider the 65 V drain-source breakdown voltage when designing the biasing and supply circuits.

Part Context

This part belongs to Infineon's GOLDMOS family of laterally-diffused MOSFETs specifically engineered for high-power radio frequency applications. It utilizes a thermally enhanced flange mount package to maximize heat dissipation in demanding broadcast environments. The internal matching network allows for direct integration into broadband amplifier stages without external impedance transformation components.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided datasheet.

FAQ

What is the maximum junction temperature for the PTFA043002E?

The maximum junction temperature (TJ) is 200 °C.

Does the PTFA043002E include internal matching networks?

Yes, the device features broadband internal matching suitable for operation from 470 to 860 MHz.

What is the typical drain efficiency at 300 W PEP?

The typical drain efficiency is 41% at 300 W PEP and 860 MHz.