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Product Detailed Parameters
- Description：RF MOSFET LDMOS 30V H-36248-2
- Series：-
- Mfr：Infineon Technologies
- Package：Tray
- Technology：LDMOS
- Frequency：765MHz
- Gain：18.7dB
- Voltage - Test：30 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：900 mA
- Power - Output：150W
- Voltage - Rated：65 V
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：2-FlatPack, Fin Leads
- Supplier Device Package：H-36248-2
- Configuration：-
Download product information
Overview
The PTFA071701EV4XWSA1 is a discontinued 170-watt LDMOS FET designed for cellular power amplifiers in the 725 to 770 MHz frequency band. It features internal I/O matching and thermally-enhanced ceramic open-cavity packages. The device provides excellent thermal performance and superior reliability, manufactured with Infineon's advanced LDMOS process.
Feature Summary
- Thermally-enhanced packages that are Pb-free and RoHS-compliant
- Broadband internal matching integrated into the design
- Integrated ESD protection meeting Human Body Model Class 2 minimum standards
- Excellent thermal stability with low HCI drift characteristics
Applications
- Cellular power amplifiers operating in the 725 to 770 MHz frequency band
- Two-carrier WCDMA applications utilizing 3GPP signals
- CDMA2000 systems requiring high linear gain and efficiency
Procurement Notes
This component is officially listed as discontinued by Infineon Technologies. Verify current availability through authorized distributors or secondary market channels. Confirm package type (H-36248-2 or H-37248-2) matches your specific design requirements before procurement.
Selection Notes
Select this part for high-power RF applications requiring robust thermal management and broadband matching within the 725-770 MHz range. Ensure compatibility with 30 V drain supply voltage and verify PCB material specifications, such as Rogers RO4350, for optimal reference circuit performance at target frequencies.
Part Context
The PTFA071701E/F series belongs to Infineon's Thermally-Enhanced High Power RF LDMOS FETs family. These devices are engineered for demanding wireless infrastructure environments, offering high output power capabilities and reliable operation under continuous wave and complex modulation conditions typical of modern cellular networks.
Replacement Considerations
Consult official Infineon documentation PD_215_14 regarding end-of-life procedures. No direct public substitute part numbers are confirmed in the provided datasheet; contact Infineon sales for recommended alternatives.
