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The PTFA081501F V1 is a thermally enhanced high-power RF LDMOS FET from Infineon’s GOLDMOS series. It delivers 150 W output power within the 864–900 MHz frequency range. The device operates at a test voltage of 28 V and provides 18 dB gain. Packaged in a surface-mount 2-Flatpack with fin leads, it supports a rated voltage of 65 V and a current rating of 10 µA.
Verify the specific suffix 'V1' against official Infineon documentation to confirm exact electrical characteristics and pinout compatibility. Ensure that the procurement channel provides genuine components with traceable origin. Cross-reference the datasheet revision date to ensure alignment with current manufacturing standards and thermal performance specifications.
Select this component for designs requiring 150 W output power in the 864–900 MHz spectrum. Consider the 2-Flatpack package for efficient thermal management in high-density layouts. Evaluate the 28 V operating voltage against system power supply capabilities. Confirm that the 18 dB gain meets the required signal amplification levels for the target application.
This part belongs to Infineon’s GOLDMOS series, which specializes in high-power RF LDMOS transistors. These devices are engineered for robust performance in demanding RF environments. The series emphasizes thermal efficiency and reliability, making it suitable for critical infrastructure where consistent power delivery and signal integrity are paramount.
Consult official Infineon substitution guides for compatible alternatives. Verify that any substitute matches the 150 W power rating, 864–900 MHz frequency range, and 2-Flatpack package dimensions. Ensure thermal resistance and electrical parameters align with the original design requirements.