PTFA082201E V1

Overview

The PTFA082201E is a 220-watt LDMOS FET designed for CDMA and WCDMA power amplifier applications in the 869 to 894 MHz band. It features broadband internal matching and thermally-enhanced packages with slotted flanges. Manufactured with Infineon's advanced LDMOS process, it provides excellent thermal performance and superior reliability. The device operates at VDD = 30 V with typical drain efficiency of 30% under two-carrier WCDMA conditions.

Feature Summary

• Thermally-enhanced package design with integrated ESD protection
• Broadband internal input and output matching networks
• Excellent thermal stability and low HCI drift characteristics

Applications

• CDMA power amplifier modules
• WCDMA base station transmitters
• Two-carrier WCDMA signal amplification

Procurement Notes

Verify component status as the datasheet indicates discontinued products. Confirm availability through authorized distributors or Infineon directly. Ensure handling precautions are followed due to electrostatic discharge sensitivity. Check specific ordering suffixes for package variations if sourcing replacements.

Selection Notes

Select based on required frequency range within 869 to 894 MHz. Consider thermal management requirements given the 220 W power rating. Evaluate package type H-36260-2 for slotted flange compatibility. Verify biasing conditions match the specified VDD and IDQ parameters for optimal linearity.

Part Context

This component belongs to Infineon's GoldMOS LDMOS family, specialized for high-power RF applications. It utilizes advanced silicon LDMOS technology to achieve high gain and efficiency. The device is engineered for robustness in demanding wireless infrastructure environments requiring stable performance over temperature variations.

Replacement Considerations

Public confirmed substitute part numbers: None available.