PTFA092211ELV4R250XTMA1

Overview

The PTFA092211EL is a 220-watt internally-matched LDMOS FET designed for EDGE and WCDMA applications in the 920 to 960 MHz band. It provides excellent thermal performance and superior reliability. At VDD = 30 V, IDQ = 1.50 A, f = 940 MHz, with a 3GPP WCDMA signal (PAR = 6.5 dB), it delivers an average output power of 50 W, linear gain of 18.0 dB, efficiency of 30%, and intermodulation distortion of -37 dBc. Typical CW performance at 940 MHz yields 250 W output power at P-1dB, 17.0 dB gain, and 59% efficiency.

Feature Summary

• Broadband internal matching
• Integrated ESD protection: Human Body Model, Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 30 V, 220 W (CW) output power

Applications

• EDGE applications
• WCDMA applications
• Two-carrier WCDMA base stations
• Six-carrier GSM base stations

Procurement Notes

Verify the exact ordering suffix against official Infineon documentation before procurement. The provided datasheet lists versions EL and FL packaged in trays. Confirm current availability status directly with authorized distributors or Infineon sales offices, as component supply can change without public notice. Ensure compliance with RoHS standards and Pb-free requirements specified in the product description.

Selection Notes

Select this component for high-power RF amplification in cellular infrastructure operating within the 920 to 960 MHz frequency range. Consider the H-33288-2 package for thermally-enhanced slotted flange mounting. Evaluate thermal resistance and junction temperature limits for heat sink design. Verify bias voltage requirements and gate leakage characteristics for driver circuit compatibility.

Part Context

This device belongs to Infineon's GoldMOS family of high-power RF LDMOS transistors. It utilizes advanced LDMOS process technology to achieve high linearity and efficiency. The part is specifically engineered for multi-standard cellular base station power amplifiers, offering integrated impedance matching to simplify RF circuit design.

Replacement Considerations

Consult Infineon technical support for verified substitute part numbers. Cross-referencing requires matching package type, pinout, and electrical specifications precisely.

FAQ

What is the maximum drain-source breakdown voltage?

The Drain-Source Breakdown Voltage (V(BR)DSS) is 65 V.

What is the typical two-carrier WCDMA efficiency at 940 MHz?

The typical drain efficiency is 30% under standard test conditions (VDD = 30 V, IDQ = 1.50 A).

Does the device include ESD protection?

Yes, it features integrated ESD protection rated at Human Body Model Class 2 minimum.