PTFA092211ELV4XWSA1

Overview

The PTFA092211ELV4XWSA1 is a thermally-enhanced high-power RF LDMOS FET manufactured by Infineon Technologies. Designed for the 920 to 960 MHz band, it delivers 220 watts of output power with broadband internal matching. The device features integrated ESD protection and excellent thermal stability. It operates at a drain-source voltage of 30 V and supports junction temperatures up to 200 °C.

Feature Summary

• Broadband internal matching network
• Integrated electrostatic discharge protection
• Excellent thermal stability with low HCI drift

Applications

• EDGE base station amplifiers
• WCDMA base station amplifiers
• Two-carrier WCDMA signal processing

Procurement Notes

Verify the exact ordering suffix against official Infineon documentation to confirm package type and shipping configuration. Confirm RoHS compliance status and lead-free specifications directly with authorized distributors or the manufacturer before procurement.

Selection Notes

Select this component for applications requiring high linearity and efficiency in the 920 to 960 MHz frequency range. Ensure the design accommodates the specific thermal resistance requirements and utilizes Rogers RO4350 PCB materials as recommended for optimal performance.

Part Context

This part belongs to Infineon's GoldMOS family of internally matched LDMOS transistors. These devices are engineered for cellular infrastructure, providing superior reliability and thermal performance compared to discrete alternatives. They simplify amplifier design by integrating impedance matching networks.

Replacement Considerations

PTFA092211FLV4XWSA1