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The PTFA092213ELV4R0XTMA1 is a thermally-enhanced high power RF LDMOS FET designed for cellular power amplifier applications in the 920 to 960 MHz band. It features internal I/O matching and an H-33288-6 package with a slotted flange. Key electrical parameters include a drain-source breakdown voltage of 65 V, on-state resistance of 0.04 Ohms, and operating gate voltage of 2.5 V. Typical CW performance at 960 MHz yields 250 W output power at P1dB with 17.5 dB gain and 52% efficiency. Two-carrier WCDMA measurements show 50 W average output power, 17.5 dB linear gain, 29% drain efficiency, and -32 dBc intermodulation distortion.
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Select this component for designs requiring high linearity and power density within the 920 to 960 MHz frequency range. The internal matching network simplifies circuit design by reducing external passive components. Consider the thermal management requirements associated with the H-33288-6 package to maintain optimal junction temperatures during operation.
This part belongs to the PTFA092213 series of internally matched LDMOS transistors. It shares core RF characteristics with the PTFA092213FL variant but utilizes a distinct package configuration. The EL designation indicates the specific pinout and mechanical outline compatible with standard base station layouts.
Public confirmed substitute part numbers are not available in the provided datasheet.