PTFA181001E V4 T500

PTFA181001E V4 T500

  • Description:RF MOSFET LDMOS 28V H-36248-2
  • Series:-

SKU:d88cc4337b00 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V H-36248-2
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:1.805GHz ~ 1.88GHz
  • Gain:16.5dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:750 mA
  • Power - Output:45W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:2-FlatPack, Fin Leads
  • Supplier Device Package:H-36248-2
  • Configuration:-

Download product information

PTFA181001E V4 T500

Overview

The PTFA181001E V4 T500 is a 100-watt LDMOS FET designed for EDGE and WCDMA power amplifier applications in the DCS band. It operates within the 1805–1880 MHz frequency range with integrated input and output matching. The device utilizes Infineon's advanced LDMOS process to provide excellent thermal performance and superior reliability. Key electrical characteristics include a drain-source breakdown voltage of 65 V, a typical linear gain of 16.5 dB, and a drain efficiency of 36% under EDGE modulation conditions at 28 V.

Feature Summary

  • Thermally-enhanced packages with slotted or earless flanges
  • Broadband internal matching for simplified integration
  • Integrated ESD protection meeting Human Body Model Class 2 standards
  • Excellent thermal stability with low HCI drift

Applications

  • EDGE power amplifier modules
  • WCDMA drive-up power amplifiers
  • DCS band RF front-end systems

Procurement Notes

Verify the specific package variant (H-36248-2 for slotted flange) against the design requirements. Confirm that the V4 revision matches the intended footprint and pinout configuration. Ensure handling precautions are strictly followed due to the device being an electrostatic discharge sensitive component. Cross-reference the ordering information to validate the exact marking and version details before finalizing procurement.

Selection Notes

Select this component for high-power RF applications requiring broadband internal matching and robust thermal management. The device supports both EDGE and WCDMA signals with verified linearity and efficiency metrics. Consider the specific package type based on the available mounting space and cooling infrastructure. Evaluate the 65 V drain-source breakdown voltage to ensure compatibility with the system's 28 V operating supply.

Part Context

This part belongs to Infineon's portfolio of thermally-enhanced high-power RF LDMOS FETs. Manufactured using advanced LDMOS technology, these devices are engineered for demanding wireless communication environments. The product line emphasizes reliability and ease of integration through built-in matching networks and specialized packaging solutions tailored for high-frequency power amplification.

Replacement Considerations

The datasheet does not list public confirmed substitute part numbers. Verify compatibility with existing designs by comparing package dimensions, pin configurations, and electrical parameters against alternative components.

PTFA181001E V4 T500PTFA181001E V4 T500

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