PTFA181001FV4R250FTMA1

Overview

The PTFA181001FV4R250FTMA1 is a 100-watt LDMOS FET designed for EDGE and WCDMA power amplifier applications in the DCS band. It operates within the 1805–1880 MHz frequency range with a drain-source breakdown voltage of 65 V. The device features broadband internal matching, thermally-enhanced packages, and integrated ESD protection. Typical CW performance at 1880 MHz includes an output power of 120 W at P-1dB, a gain of 15.5 dB, and an efficiency of 52%.

Feature Summary

• Thermally-enhanced package design for superior reliability.
• Broadband internal matching for simplified circuit integration.
• Integrated ESD protection compliant with Human Body Model Class 2 standards.

Applications

• EDGE power amplifier modules
• WCDMA drive-up amplifiers
• DCS band RF power stages

Procurement Notes

Verify the specific suffix configuration against official Infineon documentation to ensure correct package type and marking. Confirm RoHS compliance status and check for any availability notices from authorized distributors before procurement.

Selection Notes

Select this component for high-power linear RF applications requiring robust thermal stability and low HCI drift. Ensure the operating case temperature remains within specified limits to maintain optimal performance and longevity.

Part Context

This part belongs to Infineon's advanced LDMOS process family, providing excellent thermal performance. It is manufactured using specialized processes to ensure high reliability in demanding wireless communication environments.

Replacement Considerations

PTFA181001E

FAQ

What is the maximum junction temperature?

The maximum junction temperature (TJ) is 200 °C.

Does the device include internal matching?

Yes, the PTFA181001F features broadband internal matching.

What is the typical drain efficiency at 1880 MHz?

The typical drain efficiency is 52% under CW conditions at 1880 MHz.