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The PTFA191001EV4R250XTMA1 is a thermally-enhanced, internally-matched LDMOS FET designed for WCDMA, IS-95, and CDMA2000 applications. It operates from 1930 to 1990 MHz with a drain-source breakdown voltage of 65 V. The device delivers an average output power of 25 W in two-carrier WCDMA mode at 1960 MHz, achieving a linear gain of 17.0 dB and efficiency of 27.5%. In CW operation, it provides 130 W output power at P–1dB with 56% efficiency. It features integrated ESD protection and excellent thermal stability.
Verify the specific ordering suffix against official Infineon documentation to ensure correct package type and reel configuration. Confirm RoHS compliance status and lead-free characteristics as specified in the datasheet revision history. Check current availability through authorized distributors as supply may be limited or subject to factory orders.
Select this component for single-ended RF power amplifier designs requiring high linearity and efficiency in the 1930–1990 MHz range. Ensure the PCB layout matches the reference circuit using Rogers TMM4 substrate. Verify that the cooling solution can handle the total device dissipation of 417 W under worst-case conditions.
This part belongs to the PTFA191001 series of high-power RF LDMOS transistors. The 'E' variant utilizes the H-36248-2 slotted flange package, while the 'F' variant uses the H-37248-2 earless flange package. Both are designed for robust performance in mobile communication infrastructure.
Direct substitutes include the PTFA191001FV4R250XTMA1, which shares identical electrical specifications but differs in the H-37248-2 earless flange package instead of the H-36248-2 slotted flange.