PTFA191001EV4XWSA1

Overview

The PTFA191001EV4XWSA1 is a thermally-enhanced, internally-matched LDMOS FET designed for WCDMA, IS-95, and CDMA2000 applications. It operates from 1930 to 1990 MHz with a drain-source breakdown voltage of 65 V and an on-state resistance of 0.08 Ω. The device delivers 100 W output power at P–1dB (130 W typical) with 56% efficiency under CW conditions. It features integrated ESD protection meeting Human Body Model Class 2 standards and excellent thermal stability.

Feature Summary

• Thermally-enhanced packaging provides optimal heat dissipation for high-power RF operations.
• Broadband internal matching simplifies circuit design across the target frequency range.
• Integrated ESD protection ensures robustness against electrostatic discharge events.

Applications

• Single-carrier and two-carrier WCDMA power amplifiers
• IS-95 and CDMA2000 base station transmitters
• High-power RF amplifier modules

Procurement Notes

Verify component authenticity through authorized Infineon distributors or certified suppliers. Confirm package type matches requirements: H-36248-2 for slotted flange or H-37248-2 for earless flange. Ensure handling precautions are followed due to ESD sensitivity. Check datasheet revision history for any updates to electrical characteristics or mechanical dimensions before finalizing designs.

Selection Notes

Select based on required output power and frequency band coverage within 1930–1990 MHz. Consider thermal management capabilities provided by the specific package variant. Evaluate gain and efficiency requirements against typical performance curves at 30 V supply. Ensure compatibility with reference circuit impedance values provided in the datasheet for optimal broadband performance.

Part Context

This component belongs to Infineon's Thermally-Enhanced High Power RF LDMOS FET family. It is specifically engineered for cellular infrastructure applications requiring high linearity and power density. The V4 suffix indicates updated package technologies compared to earlier revisions, offering improved thermal performance and reliability for demanding RF environments.

Replacement Considerations

PTFA191001FV4XWSA1 serves as a direct functional substitute with identical electrical characteristics but utilizes the H-37248-2 earless flange package instead of the H-36248-2 slotted flange. Verify mechanical mounting constraints when selecting between these variants.

FAQ

What is the maximum junction temperature rating?

The maximum junction temperature (TJ) is rated at 200 °C.

Does the device include external matching components?

No, the PTFA191001E/F features broadband internal matching, eliminating the need for external input/output matching networks.

What is the typical drain efficiency at 25 W average output power?

The typical drain efficiency is 27.5% under two-carrier WCDMA conditions at 1960 MHz with 30 V supply.