PTFA210601EV4XWSA1

Overview

The PTFA210601EV4XWSA1 is a 60-watt LDMOS FET designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band. It features broadband internal matching and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, it provides excellent thermal performance and superior reliability. The device includes integrated ESD protection (Human Body Model, Class 2) and can handle 10:1 VSWR at 28 V, 60 W CW output power.

Feature Summary

• Broadband internal matching
• Thermally-enhanced packages
• Integrated ESD protection

Applications

• Single-carrier WCDMA power amplifiers
• Two-carrier WCDMA power amplifiers
• Base station drive-up applications

Procurement Notes

Verify the exact package variant (H-36265-2 slotted flange or H-37265-2 earless flange) matches your design requirements. Confirm RoHS compliance and Pb-free status as specified in the datasheet. Ensure handling precautions are followed due to ESD sensitivity. Check for any specific distributor availability notes regarding future supply.

Selection Notes

Select based on required package type (slotted vs. earless flange). Consider thermal resistance and junction temperature limits for heat sink design. Evaluate gain, efficiency, and linearity (IMD/ACPR) against system specifications at target frequencies within the 2110-2170 MHz range. Verify bias conditions (VDD, IDQ) match reference circuit designs.

Part Context

This component belongs to Infineon's high-power RF LDMOS transistor family, specifically optimized for cellular base station applications. It represents an evolution in LDMOS technology, offering improved thermal stability and reliability compared to earlier generations. The V4 suffix indicates updated package technologies.

Replacement Considerations

Direct replacements may include other PTFA210601E/F variants with different package options (e.g., PTFA210601E without V4 suffix if package compatibility allows). Cross-referencing with other Infineon LDMOS devices in the same power class (60W) and frequency range is recommended, ensuring pinout and thermal characteristics align.

FAQ

What is the maximum drain-source voltage?

The maximum drain-source voltage (VDSS) is 65 V.

Does the device have built-in ESD protection?

Yes, it features integrated ESD protection rated for Human Body Model, Class 2.

What is the typical gain at 2140 MHz?

The typical small-signal gain (Gps) at 2140 MHz is 16 dB.