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The PTFA211801E is a thermally-enhanced, 180-watt, internally matched GOLDMOS FET designed for WCDMA applications. It operates from 2110 to 2170 MHz and is characterized for single- and two-carrier WCDMA operation. The device features full gold metallization for reliability and a Package 30260 slotted flange form factor. Key electrical parameters include a drain-source breakdown voltage of 65 V, an on-state resistance of 0.05 Ω, and a junction temperature rating of 200 °C.
Verify the specific package variant required; the 'E' suffix denotes Package 30260 (slotted flange), while 'F' denotes Package 31260 (earless flange). Confirm that the application environment supports the specified thermal management requirements given the high power dissipation capabilities. Ensure handling precautions are strictly followed due to electrostatic discharge sensitivity.
Select this component for high-power WCDMA infrastructure requiring robust thermal performance and linear gain characteristics. The internal matching reduces external component count. Consider the 200 °C junction temperature limit for high-temperature environments. Evaluate the 10:1 VSWR capability if load mismatch conditions are anticipated during operation.
This part belongs to Infineon's GOLDMOS family of LDMOS transistors, specifically engineered for high-power RF applications. The PTFA211801E represents the slotted flange version of the PTFA211801 series, offering a distinct mechanical footprint compared to the earless flange PTFA211801F variant within the same electrical specification set.
The PTFA211801F serves as the direct functional equivalent with identical electrical specifications but utilizes Package 31260 (earless flange) instead of Package 30260. Mechanical compatibility must be verified before substitution.