PTFA211801E V4 R250

PTFA211801E V4 R250

  • Description:RF MOSFET LDMOS 28V H-36260-2
  • Series:-

SKU:c516f57b5381 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V H-36260-2
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:2.14GHz
  • Gain:15.5dB
  • Voltage - Test:28 V
  • Current Rating (Amps):10µA
  • Noise Figure:-
  • Current - Test:1.2 A
  • Power - Output:35W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:H-36260-2
  • Supplier Device Package:H-36260-2
  • Configuration:-

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PTFA211801E V4 R250

Overview

The PTFA211801E is a thermally-enhanced, 180-watt, internally matched GOLDMOS FET designed for WCDMA applications. It operates from 2110 to 2170 MHz and is characterized for single- and two-carrier WCDMA operation. The device features full gold metallization for reliability and a Package 30260 slotted flange form factor. Key electrical parameters include a drain-source breakdown voltage of 65 V, an on-state resistance of 0.05 Ω, and a junction temperature rating of 200 °C.

Feature Summary

  • Broadband internal matching for simplified circuit design
  • Thermally-enhanced packaging for optimal heat dissipation
  • Full gold metallization ensuring excellent device lifetime
  • Integrated ESD protection meeting Human Body Model Class 2

Applications

  • Single-carrier WCDMA base station amplification
  • Two-carrier WCDMA drive-up power stages
  • Broadband RF power amplification in the 2110–2170 MHz range

Procurement Notes

Verify the specific package variant required; the 'E' suffix denotes Package 30260 (slotted flange), while 'F' denotes Package 31260 (earless flange). Confirm that the application environment supports the specified thermal management requirements given the high power dissipation capabilities. Ensure handling precautions are strictly followed due to electrostatic discharge sensitivity.

Selection Notes

Select this component for high-power WCDMA infrastructure requiring robust thermal performance and linear gain characteristics. The internal matching reduces external component count. Consider the 200 °C junction temperature limit for high-temperature environments. Evaluate the 10:1 VSWR capability if load mismatch conditions are anticipated during operation.

Part Context

This part belongs to Infineon's GOLDMOS family of LDMOS transistors, specifically engineered for high-power RF applications. The PTFA211801E represents the slotted flange version of the PTFA211801 series, offering a distinct mechanical footprint compared to the earless flange PTFA211801F variant within the same electrical specification set.

Replacement Considerations

The PTFA211801F serves as the direct functional equivalent with identical electrical specifications but utilizes Package 31260 (earless flange) instead of Package 30260. Mechanical compatibility must be verified before substitution.

PTFA211801E V4 R250PTFA211801E V4 R250

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