PTFA211801E-V5-R250

Overview

The PTFA211801E is a thermally-enhanced, 180-watt LDMOS FET designed for WCDMA applications. It operates from 2110 to 2170 MHz with broadband internal matching. At 2140 MHz and 28 V, it delivers 45.5 dBm average output power with 15.5 dB gain and 27.5% efficiency. CW performance at 2170 MHz reaches 180 W output at P1dB with 52% efficiency. The device features integrated ESD protection, excellent thermal stability, low HCI drift, and handles 10:1 VSWR at 28 V.

Feature Summary

• Broadband internal matching
• Integrated ESD protection
• Excellent thermal stability
• Low HCI drift

Applications

• WCDMA base station amplifiers
• Two-carrier WCDMA operation
• Single-carrier WCDMA operation

Procurement Notes

Verify the component originates from Infineon Technologies AG, as MACOM Technology Solutions acts as a distributor. Confirm the package type H-36260-2 matches your design requirements. Ensure handling precautions are followed due to electrostatic discharge sensitivity. Check RoHS compliance status if required by your manufacturing standards.

Selection Notes

Select this component for high-power RF applications requiring robust thermal management and reliability in WCDMA environments. Consider its capability to handle significant voltage standing wave ratio variations during operation. Evaluate the need for integrated ESD protection within your system architecture. Assess compatibility with standard test fixtures used for characterization.

Part Context

This part belongs to the family of thermally-enhanced high-power RF LDMOS FETs. These devices are manufactured using advanced LDMOS processes to provide superior reliability. They are specifically characterized for single- and two-carrier WCDMA operations across defined frequency bands.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.