PTFA212001EV4R0XTMA1

Overview

The PTFA212001EV4R0XTMA1 is a discontinued 200-watt LDMOS FET designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band. It features broadband internal matching and thermally-enhanced packages with slotted flanges. Manufactured using Infineon's advanced LDMOS process, it provides excellent thermal performance and superior reliability.

Feature Summary

• Thermally-enhanced package design with integrated input and output matching
• Broadband internal matching for simplified circuit integration
• Integrated ESD protection meeting Human Body Model Class 2 standards
• Excellent thermal stability with low HCI drift characteristics

Applications

• Single-carrier WCDMA power amplifiers
• Two-carrier WCDMA power amplifiers
• S-band RF power amplification

Procurement Notes

This component is officially listed as discontinued by Infineon Technologies. Verify current availability status directly with authorized distributors or the manufacturer before initiating procurement processes. Ensure compliance with all handling precautions due to electrostatic discharge sensitivity.

Selection Notes

Select this device for high-power S-band applications requiring robust thermal management and linear gain. Consider its specific package dimensions and mounting requirements during PCB layout. Evaluate thermal resistance and heat dissipation capabilities to ensure optimal junction temperature operation under maximum load conditions.

Part Context

Infineon Technologies manufactures this part using an advanced LDMOS process technology. The device belongs to the GoldMOS family of RF power transistors. It is specifically engineered for base station infrastructure within the telecommunications sector, targeting high-efficiency signal amplification.

Replacement Considerations

PTFA212001F (Package H-37260-2)

FAQ

What is the typical drain efficiency for two-carrier WCDMA at 2140 MHz?

The typical drain efficiency is 28% when operating at VDD = 30 V, IDQ = 1.6 A, and an average output power of 50 W.

What is the maximum junction temperature rating?

The maximum junction temperature (TJ) is rated at 200 °C.

Does the device include built-in protection mechanisms?

Yes, the device includes integrated ESD protection that meets the Human Body Model Class 2 standard minimum requirement.