PTFA212001EV4XWSA1

PTFA212001EV4XWSA1

  • Description:RF MOSFET LDMOS 30V H-36260-2
  • Series:-

SKU:76859f6e7091 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 30V H-36260-2
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:2.14GHz
  • Gain:15.8dB
  • Voltage - Test:30 V
  • Current Rating (Amps):10µA
  • Noise Figure:-
  • Current - Test:1.6 A
  • Power - Output:50W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:H-36260-2
  • Supplier Device Package:H-36260-2
  • Configuration:-

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PTFA212001EV4XWSA1

Overview

The PTFA212001EV4XWSA1 is an RF power field-effect transistor manufactured by Infineon Technologies. It utilizes LD MOS technology and operates in the S-band at a frequency of 1.99 GHz. The device features a drain-source voltage rating of 65 V and a test voltage of 30 V. It delivers an output power of 50 W with a gain of 15.9 dB. The component is housed in an H-36260-2 flange mount package.

Feature Summary

  • High reliability construction suitable for demanding RF environments
  • Thermally enhanced package design for efficient heat dissipation
  • Optimized for linear amplification applications

Applications

  • Single-carrier WCDMA power amplifier drive stages
  • Two-carrier WCDMA power amplifier drive stages
  • S-band RF signal amplification

Procurement Notes

Verify part authenticity through authorized Infineon channels or certified distributors. Confirm the specific suffix indicates the correct packaging variant. Check current availability status as distribution may vary. Ensure handling precautions are followed due to electrostatic sensitivity. Validate that the component meets all required environmental compliance standards for the intended deployment.

Selection Notes

Select this component for S-band applications requiring high linearity and thermal stability. Consider the H-36260-2 package for mounting constraints. Evaluate the 50 W output capability against system power requirements. Assess the 15.9 dB gain for appropriate driver stage integration. Verify compatibility with 30 V operating conditions.

Part Context

This device belongs to the PTFA212001 series of thermally enhanced high-power RF LDMOS FETs. These components are engineered for single- and two-carrier WCDMA power amplifier applications within the 2110 to 2170 MHz band. The series emphasizes superior reliability and thermal performance through advanced manufacturing processes.

Replacement Considerations

The PTFA212001F1V4XWSA1 is a related variant within the same family, offering similar specifications but potentially differing in package details or specific electrical tolerances. Verify pinout and thermal characteristics before substitution.

PTFA212001EV4XWSA1PTFA212001EV4XWSA1

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