PTFA212001F/1 P4

Overview

The PTFA212001F is a single-element, S-band silicon N-channel RF power LDMOS field-effect transistor. It operates within the 2110 to 2170 MHz frequency range and is designed for high-power applications requiring 200 watts of output. The device utilizes an H-36260-2 flange mount package with a dual flat terminal configuration. Key electrical characteristics include a minimum drain-source breakdown voltage of 65 V and a maximum operating temperature of 200 °C. Manufactured using Infineon's advanced LDMOS process, it supports enhancement mode operation.

Feature Summary

• Thermally enhanced package design featuring slotted or earless flanges for superior heat dissipation
• Advanced LDMOS manufacturing process ensuring high reliability and thermal performance
• Integrated input and output matching networks optimized for WCDMA signal amplification

Applications

• Single-carrier WCDMA power amplifier systems
• Two-carrier WCDMA drive-up applications
• S-band radio frequency amplification

Procurement Notes

Verify the specific suffix designation against official documentation to confirm exact pinout and thermal interface specifications. Ensure compatibility with existing cooling solutions due to the flange mount form factor. Confirm RoHS compliance status through current manufacturer declarations before integration into final assemblies.

Selection Notes

Select this component for designs requiring robust S-band amplification with integrated matching capabilities. Evaluate thermal management requirements carefully given the 200-watt power handling and 200 °C junction temperature limit. Ensure the driving circuitry supports the enhancement mode operation and provides stable bias conditions for linear amplification.

Part Context

This device belongs to Infineon's portfolio of thermally enhanced high-power RF LDMOS transistors. These components are engineered specifically for telecommunications infrastructure, offering a balance of high power density and linearity. The technology leverages mature silicon processes to deliver consistent performance in demanding wireless communication environments.

Replacement Considerations

Consult official substitution lists for compatible LDMOS devices within the same power class. Verify that any alternative maintains identical S-band frequency coverage and package dimensions to ensure mechanical fit without redesigning the host system.

FAQ

What is the maximum operating temperature for the PTFA212001F?

The maximum operating temperature for this transistor is 200 °C.

Does the PTFA212001F include internal matching networks?

Yes, the device features integrated input and output matching networks.

What package type does the PTFA212001F utilize?

It uses the H-36260-2 flange mount package with dual flat terminals.