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The PTFA212401E V4 R250 is a 240-watt LDMOS FET designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band. It features broadband internal matching and thermally-enhanced packages with slotted flanges. The device provides excellent thermal performance, superior reliability, and integrated ESD protection (Human Body Model Class 2). Manufactured using Infineon's advanced LDMOS process, it ensures low HCI drift and handles 5:1 VSWR at 30 V and 240 W CW output power.
Verify the specific revision suffix 'V4' against current Infineon documentation to ensure compatibility with your design requirements. Confirm that the H-36260-2 package outline matches your PCB footprint specifications. Check for any updated availability status or alternative package options if the slotted flange variant is no longer supported.
Select this component when designing amplifiers requiring 240 W output power within the 2110 to 2170 MHz frequency range. Ensure the thermal management system can handle the total device dissipation of 761 W and maintain the case temperature within specified limits. Verify that the bias voltage and gate drive requirements align with the typical operating conditions provided in the datasheet.
This part belongs to Infineon's GoldMOS® family of high-power RF LDMOS transistors. It is specifically engineered for cellular base station infrastructure, offering robust performance in demanding RF environments. The device represents an evolution in LDMOS technology, focusing on efficiency and linearity for modern wireless communication standards.
Consult official Infineon documentation for direct replacements. The PTFA212401F V4 is a related variant featuring an earless flange package instead of the slotted flange found in the PTFA212401E.