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The PTFA212401E V4 is a 240-watt LDMOS FET designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band. It features broadband internal matching and thermally-enhanced packages with slotted flanges. The device provides excellent thermal performance, superior reliability, and integrated ESD protection (Human Body Model Class 2). Typical CW performance at 2140 MHz and 30 V yields an output power of 240 W at P–1dB with 54% efficiency. Two-carrier WCDMA measurements show 47.0 dBm average output power, 15.8 dB linear gain, and 28% efficiency.
Verify the specific ordering suffix 'V4' against official Infineon documentation to confirm the exact package variant and revision level. Ensure compatibility with the H-36260-2 package outline specifications. Confirm that the component meets all required environmental standards and handling precautions for electrostatic discharge sensitive devices prior to integration.
Select this component for high-power RF applications requiring robust thermal management and reliable performance in WCDMA systems. Consider the 65 V drain-source breakdown voltage and 200 °C junction temperature capability for demanding operating conditions. Evaluate the need for external biasing circuits based on the reference schematic provided in the datasheet.
This part belongs to Infineon's portfolio of high-power RF LDMOS transistors. It is manufactured using advanced LDMOS process technology to ensure high linearity and efficiency. The device is intended for base station and broadcast applications where high power density and wide bandwidth are critical requirements.
PTFA212401F V4 is a direct alternative within the same family, differing only in the earless flange package configuration (H-37260-2).