PTFA212401E V4

PTFA212401E V4

  • Description:RF MOSFET LDMOS 30V H-36260-2
  • Series:-

SKU:f07ae72af596 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 30V H-36260-2
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tray
  • Technology:LDMOS
  • Frequency:2.14GHz
  • Gain:15.8dB
  • Voltage - Test:30 V
  • Current Rating (Amps):10µA
  • Noise Figure:-
  • Current - Test:1.6 A
  • Power - Output:50W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:H-36260-2
  • Supplier Device Package:H-36260-2
  • Configuration:-

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PTFA212401E V4

Overview

The PTFA212401E V4 is a 240-watt LDMOS FET designed for single- and two-carrier WCDMA power amplifier applications in the 2110 to 2170 MHz band. It features broadband internal matching and thermally-enhanced packages with slotted flanges. The device provides excellent thermal performance, superior reliability, and integrated ESD protection (Human Body Model Class 2). Typical CW performance at 2140 MHz and 30 V yields an output power of 240 W at P–1dB with 54% efficiency. Two-carrier WCDMA measurements show 47.0 dBm average output power, 15.8 dB linear gain, and 28% efficiency.

Feature Summary

  • Thermally-enhanced package construction with Pb-free and RoHS compliance
  • Broadband internal input and output matching networks
  • Integrated electrostatic discharge (ESD) protection rated at Human Body Model Class 2
  • Excellent thermal stability and low hot carrier injection (HCI) drift

Applications

  • Single-carrier WCDMA power amplifiers
  • Two-carrier WCDMA power amplifiers
  • Broadband RF power amplification in the 2110 to 2170 MHz band

Procurement Notes

Verify the specific ordering suffix 'V4' against official Infineon documentation to confirm the exact package variant and revision level. Ensure compatibility with the H-36260-2 package outline specifications. Confirm that the component meets all required environmental standards and handling precautions for electrostatic discharge sensitive devices prior to integration.

Selection Notes

Select this component for high-power RF applications requiring robust thermal management and reliable performance in WCDMA systems. Consider the 65 V drain-source breakdown voltage and 200 °C junction temperature capability for demanding operating conditions. Evaluate the need for external biasing circuits based on the reference schematic provided in the datasheet.

Part Context

This part belongs to Infineon's portfolio of high-power RF LDMOS transistors. It is manufactured using advanced LDMOS process technology to ensure high linearity and efficiency. The device is intended for base station and broadcast applications where high power density and wide bandwidth are critical requirements.

Replacement Considerations

PTFA212401F V4 is a direct alternative within the same family, differing only in the earless flange package configuration (H-37260-2).

PTFA212401E V4PTFA212401E V4

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