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PTFA220041M-V4-R1K is a silicon LDMOS RF power transistor manufactured by MACOM Technology Solutions. It operates within the frequency range of 700 MHz to 22,000 MHz and delivers 200W of output power. The device is designed for high-efficiency performance at a test voltage of 28V and a test current of 50 mA. It utilizes a plastic surface-mount DFN package with an exposed pad, specifically identified as a 10-LDFN configuration. This component is engineered for robust operation in demanding radio frequency environments.
Verify that the specific suffix -R1K matches the required tape and reel packaging specifications for your assembly line. Confirm the active status or NRND lifecycle stage through official MACOM channels prior to finalizing procurement plans. Ensure compatibility with the 10-LDFN exposed pad thermal management requirements during integration.
Select this component when a wide bandwidth covering 700 MHz to 22 GHz is required alongside significant power output capabilities. The silicon LDMOS construction offers a balance of performance and cost-effectiveness compared to other semiconductor technologies. Consider the 28V supply requirement and the specific thermal dissipation needs associated with the plastic SMT DFN package layout.
This part belongs to the PTFA series of RF MOSFET transistors from MACOM Technology Solutions. The series is characterized by its use of silicon LDMOS technology to provide high power density and efficiency across broad frequency ranges. The V4 designation indicates a specific generation or iteration within this product family, optimized for modern RF amplifier designs.
The base model PTFA220041M-V4 is noted as Not Recommended for New Designs (NRND). While functionally similar, verify if the -R1K suffix provides identical electrical characteristics and pinout compatibility before substituting. Consult official MACOM documentation to confirm any updates in the recommended replacement portfolio.