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The PTFA220041M-V4 is an RF MOSFET transistor manufactured by MACOM Technology Solutions. It utilizes Silicon LDMOS technology and operates within a frequency range of 700 MHz to 22,000 MHz. The device is designed for high-power applications, delivering 200W output power with a test voltage of 28V. It features a gain of 18.5 dB at 940 MHz and is housed in a 10-SON package.
Verify the specific suffix (e.g., -R1K) against the official datasheet to confirm reel quantity and tape specifications. Ensure the component matches the required 10-SON or SMT DFN footprint. Confirm lifecycle status as NRND if applicable. Cross-reference manufacturer part numbers with distributor listings to avoid counterfeit components. Validate electrical parameters against the latest public documentation before integration.
Select this component for applications requiring high output power across a wide frequency spectrum. Consider the 28V operating voltage and thermal management requirements inherent to 200W LDMOS devices. Evaluate the 10-SON package constraints for PCB layout and heat dissipation. Compare gain specifications against system noise floor requirements. Ensure compatibility with broadband matching networks for the 700 MHz to 22 GHz range.
This RF MOSFET belongs to MACOM's portfolio of semiconductor products for data center, telecommunication, and industrial applications. It supports high-performance analog solutions for demanding size and power integrity requirements. The device contributes to the company's focus on high-speed connectivity and coherent transmission technologies.
Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout and thermal characteristics if considering alternative LDMOS transistors from other manufacturers.