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The PTFA240451E V1 is a thermally-enhanced, internally-matched GOLDMOS® RF LDMOS FET designed for CDMA2000 and WiMAX applications from 2420 to 2480 MHz. It operates at VDD = 28 V with typical drain efficiency of 31% and gain of 14 dB at 2450 MHz. The device delivers 45 W average output power in three-carrier CDMA2000 mode and handles up to 50 W at P-1dB. It features integrated ESD protection (HBM Class 2), full gold metallization, and a thermal resistance of 0.89 °C/W.
Verify the specific ordering suffix 'V1' against the manufacturer's current product status documentation. Confirm that the H-30265-2 package outline matches the required mechanical footprint for the target PCB design. Ensure that static-sensitive handling protocols are strictly followed during assembly due to the device's ESD sensitivity classification.
Select this component when high linearity and thermal stability are critical for multi-carrier modulation schemes. The internal matching simplifies circuit design by reducing external component count. Evaluate the junction temperature limit of 200 °C against the expected ambient conditions to ensure adequate thermal management using the specified slotted flange mounting method.
This part belongs to Infineon's GOLDMOS® family of high-power RF LDMOS transistors. It utilizes a thermally-enhanced H-30265-2 package featuring a slotted flange for direct heatsink attachment. The technology emphasizes robustness through full gold plating on contact surfaces, distinguishing it from standard aluminum-metallized counterparts in terms of long-term reliability under harsh operating conditions.
No public confirmed substitute part numbers are available in the provided datasheet.