PTFA240451E V1

PTFA240451E V1

  • Description:RF MOSFET LDMOS 28V H-30265-2
  • Series:GOLDMOS®

SKU:128fe908e63e Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V H-30265-2
  • Series:GOLDMOS®
  • Mfr:Infineon Technologies
  • Package:Tray
  • Technology:LDMOS
  • Frequency:2.48GHz
  • Gain:14dB
  • Voltage - Test:28 V
  • Current Rating (Amps):10µA
  • Noise Figure:-
  • Current - Test:450 mA
  • Power - Output:45W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:2-FlatPack, Fin Leads
  • Supplier Device Package:H-30265-2
  • Configuration:-

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PTFA240451E V1

Overview

The PTFA240451E V1 is a thermally-enhanced, internally-matched GOLDMOS® RF LDMOS FET designed for CDMA2000 and WiMAX applications from 2420 to 2480 MHz. It operates at VDD = 28 V with typical drain efficiency of 31% and gain of 14 dB at 2450 MHz. The device delivers 45 W average output power in three-carrier CDMA2000 mode and handles up to 50 W at P-1dB. It features integrated ESD protection (HBM Class 2), full gold metallization, and a thermal resistance of 0.89 °C/W.

Feature Summary

  • Thermally-enhanced packaging with full gold metallization for excellent lifetime and reliability
  • Broadband internal matching optimized for single-ended operation
  • Integrated Human Body Model ESD protection rated at Class 2 minimum
  • Capable of handling 10:1 VSWR at 28 V and 45 W CW output power

Applications

  • Three-Carrier CDMA2000 base station amplifiers
  • WiMAX system power amplification
  • IS-95 CDMA network infrastructure
  • Broadband wireless communication transmitters

Procurement Notes

Verify the specific ordering suffix 'V1' against the manufacturer's current product status documentation. Confirm that the H-30265-2 package outline matches the required mechanical footprint for the target PCB design. Ensure that static-sensitive handling protocols are strictly followed during assembly due to the device's ESD sensitivity classification.

Selection Notes

Select this component when high linearity and thermal stability are critical for multi-carrier modulation schemes. The internal matching simplifies circuit design by reducing external component count. Evaluate the junction temperature limit of 200 °C against the expected ambient conditions to ensure adequate thermal management using the specified slotted flange mounting method.

Part Context

This part belongs to Infineon's GOLDMOS® family of high-power RF LDMOS transistors. It utilizes a thermally-enhanced H-30265-2 package featuring a slotted flange for direct heatsink attachment. The technology emphasizes robustness through full gold plating on contact surfaces, distinguishing it from standard aluminum-metallized counterparts in terms of long-term reliability under harsh operating conditions.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided datasheet.

PTFA240451E V1PTFA240451E V1

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