PTFA260451E V1

Overview

The PTFA260451E V1 is a thermally-enhanced high-power RF LDMOS FET operating from 2.62 to 2.68 GHz. It delivers 45 W output power with an internal matching network for wideband performance. Key electrical parameters include a drain-source breakdown voltage of 65 V, on-state resistance of 0.16 Ω, and junction temperature rating of 200 °C. Typical three-carrier CDMA2000 performance at 28 V and 500 mA quiescent current yields 10 W average output power, 14 dB gain, 24% efficiency, and -52 dBc ACPR.

Feature Summary

• Thermally-enhanced packaging providing optimal heat dissipation
• Internal matching network designed for wideband operation
• Integrated ESD protection meeting Human Body Model Class 2 standards
• Full gold metallization ensuring excellent device lifetime

Applications

• CDMA2000 base station amplifiers
• Super3G (3GPP TSG RAN) infrastructure
• WiMAX system transmitters

Procurement Notes

Verify the specific ordering suffix 'V1' against official Infineon documentation to confirm package outline H-30265-2 compatibility. Ensure that the component meets RoHS compliance requirements as stated in the datasheet. Confirm thermal interface specifications for proper mounting to achieve the rated thermal resistance.

Selection Notes

Select this component for applications requiring high power density within the 2.62–2.68 GHz range. The internal matching simplifies circuit design by reducing external components. Evaluate thermal management capabilities to maintain junction temperatures below the 200 °C maximum limit during continuous wave operation.

Part Context

This part belongs to Infineon's GOLDMOS® family of RF power transistors. It utilizes LDMOS technology optimized for linear amplifier applications. The device is specifically engineered to handle high voltage standing wave ratios while maintaining low HCI drift and excellent thermal stability.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.