PTFB090901FA-V2-R250

Overview

The PTFB090901FA-V2-R250 is an RF LDMOS FET manufactured by MACOM Technology Solutions. It operates within the 920 MHz to 960 MHz frequency range and delivers a typical output power of 90 W with a gain of 19.5 dB. The device features a drain-source breakdown voltage (Vds) of 65 V, a maximum gate-source voltage (Vgs) of +10 V, and a drain-source on-resistance (Rds On) of 123 mOhms. It supports surface-mount installation in an H-36265-2 package and functions reliably at temperatures up to +225°C.

Feature Summary

• High-power RF performance with 90 W output capability
• Operates efficiently in the 920–960 MHz band
• Robust thermal stability for high-temperature environments

Applications

• Base station power amplification
• Industrial, Scientific, and Medical (ISM) equipment
• Military communication systems

Procurement Notes

Verify the specific suffix R250 against official MACOM documentation to confirm reel quantity and packaging specifications. Ensure compatibility with the H-36265-2 footprint during integration. Confirm RoHS compliance status through current manufacturer declarations before procurement.

Selection Notes

Select this component when designing circuits requiring high linearity and efficiency in the 920–960 MHz spectrum. Consider the 123 mOhm on-resistance for thermal management calculations. Verify that the system can accommodate the +10 V gate drive requirement and the specified operating temperature limits.

Part Context

This part belongs to MACOM's portfolio of RF power MOSFETs designed for demanding wireless infrastructure applications. It complements other LDMOS devices in the series, offering a balance of high output power and gain for broadband radio frequency amplification tasks.

Replacement Considerations

Consult MACOM's official cross-reference tools for verified substitutes. Do not assume pin-compatible alternatives without verifying electrical parameters such as Vds, gain, and package dimensions.