PTFB093608FVV2XWSA1

PTFB093608FVV2XWSA1

  • Description:RF MOSFET LDMOS
  • Series:*

SKU:300feaf654a0 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS
  • Series:*
  • Mfr:Infineon Technologies
  • Package:Tray
  • Technology:-
  • Frequency:-
  • Gain:-
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PTFB093608FVV2XWSA1

Overview

The PTFB093608FVV2XWSA1 is an RF LDMOS power transistor manufactured by Infineon Technologies. It utilizes silicon technology and is housed in the H-34275G-6 package. This component is classified as a radio frequency metal oxide semiconductor field-effect transistor designed for high-frequency power applications.

Feature Summary

  • Utilizes lateral double-diffused metal-oxide-semiconductor (LDMOS) architecture for RF performance
  • Designed specifically for radio frequency power amplification tasks

Applications

  • RF power amplification circuits
  • Radio frequency signal processing systems

Procurement Notes

This component is officially discontinued and no longer in production. Availability is restricted, with limited stock potentially remaining through authorized channels. Verification of current supply status and authenticity is essential before procurement due to its end-of-life status.

Selection Notes

Selection requires consideration of the component's discontinued status. Designers should evaluate alternative RF LDMOS transistors from the manufacturer that offer similar package dimensions and electrical characteristics to ensure long-term supply chain stability for new designs.

Part Context

This part belongs to Infineon's portfolio of RF MOSFET transistors. It represents a specialized silicon-based device intended for high-frequency operations. The specific model designation indicates its classification within the manufacturer's discrete semiconductor product lines.

PTFB093608FVV2XWSA1PTFB093608FVV2XWSA1

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