PTFB093608SVV2R250XTMA1

PTFB093608SVV2R250XTMA1

  • Description:RF MOSFET LDMOS H-37275G-6
  • Series:-

SKU:0e0a6a513802 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS H-37275G-6
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:920MHz ~ 960MHz
  • Gain:20dB
  • Voltage - Test:-
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:-
  • Power - Output:360W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:H-37275G-6/2
  • Supplier Device Package:H-37275G-6/2
  • Configuration:-

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PTFB093608SVV2R250XTMA1

Overview

The PTFB093608SVV2R250XTMA1 is a dual N-channel RF power LDMOS transistor designed for high-efficiency linear amplification. It operates with a drain voltage of 28 V and delivers an average output power of 100 W at 960 MHz under pulsed conditions. The device features a low thermal resistance junction-to-case of 0.45 °C/W, enabling robust heat dissipation in demanding environments. It incorporates built-in gate protection circuitry to enhance operational reliability against electrostatic discharge and transient overvoltage events.

Feature Summary

  • Dual N-channel architecture providing balanced drive capability
  • Integrated gate protection circuitry for enhanced device safety
  • Optimized for high linearity and efficiency in linear amplifier applications

Applications

  • Base station power amplifiers
  • Broadband linear amplification systems
  • WCDMA infrastructure equipment

Procurement Notes

Verify the specific suffix XTMA1 to confirm tape-and-reel packaging configuration. Ensure the component matches the RoHS compliant lead-free designation required by your assembly process. Cross-reference the manufacturer's latest datasheet version to validate electrical characteristics before finalizing procurement specifications.

Selection Notes

Select this component when designing for 28 V supply rails requiring 100 W output power. Evaluate the thermal management requirements based on the specified junction-to-case thermal resistance. Confirm that the package dimensions align with the intended PCB layout and cooling strategy for the target application frequency range.

Part Context

This part belongs to Infineon's portfolio of RF power transistors engineered for telecommunications infrastructure. It utilizes advanced LDMOS technology to achieve high power density and linearity. The device is specifically optimized for base station applications where signal fidelity and thermal stability are critical performance metrics.

Replacement Considerations

Consult official replacement guides for updated variants within the same product family. Verify pin compatibility and thermal interface requirements before substituting.

PTFB093608SVV2R250XTMA1PTFB093608SVV2R250XTMA1

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