PTFB182503EL-V1-R0

Overview

The PTFB182503EL-V1-R0 is an RF LDMOS transistor manufactured by MACOM Technology Solutions. It is designed for high-frequency amplification applications operating at 1.88GHz. The device delivers 50W output power and utilizes a 30V supply voltage. It is housed in the H-33288-6 package, which supports surface-mount installation. This component serves as a robust solution for demanding radio frequency power stages.

Feature Summary

• High-power RF amplification capability at 1.88GHz
• LDMOS technology for efficient signal processing
• Optimized for 30V operational environments

Applications

• High-frequency RF power amplification
• Broadband transmitter stages
• Wireless infrastructure equipment

Procurement Notes

Verify the specific suffix R0 against the manufacturer's current datasheet to ensure compatibility with required packaging formats. Confirm that the H-33288-6 package dimensions align with the target PCB layout. Ensure thermal management solutions are adequate for 50W output power dissipation during operation.

Selection Notes

Select this component when a 50W output power level is required at 1.88GHz. Consider the 30V supply constraint and the specific H-33288-6 footprint requirements. Evaluate thermal performance needs relative to the LDMOS construction. Compare against alternative packages if space constraints differ from the standard strip configuration.

Part Context

This part belongs to MACOM's portfolio of RF LDMOS transistors. These devices are engineered for linear amplification in wireless communication systems. The family typically emphasizes high efficiency and power density. The PTFB series specifically targets broadband applications requiring stable gain and linearity.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.