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Product Detailed Parameters
- Description：RF MOSFET 30V H-33288-6
- Series：-
- Mfr：MACOM Technology Solutions
- Package：Strip
- Technology：-
- Frequency：1.88GHz
- Gain：19dB
- Voltage - Test：30 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：1.85 A
- Power - Output：50W
- Voltage - Rated：65 V
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Package / Case：H-33288-6
- Supplier Device Package：H-33288-6
- Configuration：-
Download product information
Overview
The PTFB182503FL-V2-R0 is an N-channel RF LDMOS FET manufactured by MACOM Technology Solutions. It utilizes silicon technology and features a single channel configuration. The device specifies a Drain-Source Breakdown Voltage (Vds) of 65 V. This component is designed for radio frequency applications requiring robust power handling capabilities within its specified voltage limits.
Feature Summary
- N-channel RF LDMOS field-effect transistor architecture
- Silicon-based semiconductor technology construction
- Single-channel operational design
Applications
- RF power amplification stages
- Wireless communication transmitters
- Broadband signal processing systems
Procurement Notes
Verify the specific suffix R0 against procurement requirements to ensure compatibility with intended packaging or reel specifications. Confirm that the 65 V breakdown rating aligns with system voltage constraints. Cross-reference the single-channel topology with circuit design schematics to validate integration suitability. Ensure sourcing channels provide authentic MACOM Technology Solutions components to maintain performance integrity.
Selection Notes
Select this component when a 65 V drain-source breakdown voltage is required for RF applications. The N-channel LDMOS structure offers specific gain and linearity characteristics suitable for broadband amplification. Evaluate thermal management needs based on the package type and expected power dissipation. Compare against alternative RF MOSFETs if higher voltage ratings or different channel configurations are necessary for the target design.
Part Context
This part belongs to the family of RF MOSFET transistors produced by MACOM Technology Solutions. It is categorized under RF FETs and specifically identified as an LDMOS device. The product line supports various RF applications requiring reliable silicon-based power amplification solutions with defined voltage thresholds.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Verify pinout and electrical parameters before considering any alternative devices from other manufacturers.
