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PTFB182503FL-V2-R250 is an RF MOSFET LDMOS transistor manufactured by MACOM Technology Solutions. It operates within the frequency range of 1.805 GHz to 1.88 GHz. The device provides a gain of 19 dB and delivers an output power of 240 W. It supports a maximum operating temperature of +200 C.
Verify the complete part number including suffixes against official MACOM documentation to ensure correct package and tape specifications. Confirm that the intended application environment remains within the specified thermal limits of +200 C. Cross-reference datasheet revisions to ensure compatibility with current design requirements.
Select this component when designing for the 1.8 GHz cellular bands requiring high output power. Evaluate thermal management solutions suitable for the high operating temperature rating. Compare gain and power metrics against alternative LDMOS devices to ensure system efficiency meets design targets.
This device belongs to the family of thermally-enhanced high-power RF LDMOS FETs produced by MACOM. These transistors are engineered for robust performance in demanding wireless communication environments, offering reliability and consistent electrical characteristics across the specified frequency range.
Consult official MACOM substitution guides for verified alternatives. Do not assume functional equivalence with other RF MOSFETs without verifying pinout, thermal resistance, and electrical parameters against the original datasheet.
The device operates between 1.805 GHz and 1.88 GHz.
The maximum operating temperature is +200 C.