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Product Detailed Parameters
- Description：RF MOSFET LDMOS 30V H-36275-8
- Series：-
- Mfr：MACOM Technology Solutions
- Package：Strip
- Technology：LDMOS
- Frequency：1.88GHz
- Gain：17dB
- Voltage - Test：30 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：2.6 A
- Power - Output：80W
- Voltage - Rated：65 V
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Package / Case：H-36275-8
- Supplier Device Package：H-36275-8
- Configuration：-
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Overview
The PTFB183404E-V1-R0 is an RF MOSFET utilizing LDMOS technology, designed for multi-standard cellular power amplifier applications. It operates within a frequency range of 1.2GHz to 1.4GHz and delivers an output power of 340 watts. The device features a gain of 17dB and requires a test voltage of 30V with a current of 50mA. Packaged in the H-36275-8 format, it supports surface mount installation and complies with RoHS3 standards.
Feature Summary
- High-power LDMOS construction optimized for cellular base station amplifiers
- Capable of delivering 340W output power at specified operating frequencies
- Integrated design supporting multi-standard modulation schemes
Applications
- Multi-standard cellular power amplifier modules
- Base station transmitter front-ends
- RF signal generation systems
Procurement Notes
Verify the specific package designation against official MACOM documentation, as distributor listings may reference variant suffixes or alternate housing types such as H-36265-2. Confirm that the requested unit matches the exact electrical specifications for 340W operation and 30V bias requirements before finalizing procurement orders.
Selection Notes
Select this component when designing high-efficiency power stages for cellular infrastructure requiring robust thermal handling and linear performance. Ensure the circuit layout accommodates the specific footprint of the H-36275-8 package and provides adequate heat dissipation paths for continuous 340W output operations.
Part Context
This part belongs to MACOM's portfolio of high-performance semiconductor solutions targeting telecommunications and industrial sectors. It represents a specialized LDMOS transistor engineered to meet the rigorous demands of modern wireless communication networks, offering reliability and power density for critical infrastructure components.
Replacement Considerations
Consult official MACOM substitution guides for compatible LDMOS alternatives. Verify pinout compatibility and thermal characteristics if replacing with other models from the manufacturer's discrete transistor lineup.
