PTFB183404F-V2-R0

PTFB183404F-V2-R0

  • Description:RF MOSFET LDMOS 30V H-37275-6
  • Series:-

SKU:3d004ab9b059 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 30V H-37275-6
  • Series:-
  • Mfr:MACOM Technology Solutions
  • Package:Strip
  • Technology:LDMOS
  • Frequency:1.88GHz
  • Gain:17dB
  • Voltage - Test:30 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:2.6 A
  • Power - Output:80W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:H-37275-6/2
  • Supplier Device Package:H-37275-6/2
  • Configuration:-

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PTFB183404F-V2-R0

Overview

The PTFB183404F-V2-R0 is an RF MOSFET utilizing LDMOS technology, designed for high-frequency applications. It operates at a frequency of 1.88 GHz with a gain of 17 dB. The device features a drain-source breakdown voltage of 65 V and a drain-source resistance of 50 mOhms. It supports an operating frequency range from 1.805 GHz to 1.88 GHz. The component is housed in the H-37275-6/2 package.

Feature Summary

  • Utilizes LDMOS technology for RF performance
  • Designed for high-frequency operation up to 1.88 GHz
  • Optimized for power amplifier applications

Applications

  • RF power amplification
  • Wireless communication systems
  • Base station transceivers

Procurement Notes

Verify component authenticity through authorized MACOM distributors. Confirm package integrity upon receipt. Ensure ESD precautions are followed during handling. Check datasheet revisions for latest electrical characteristics. Validate compatibility with existing circuit designs before integration.

Selection Notes

Consider the 65 V breakdown voltage and 50 mOhms on-resistance for power efficiency. Evaluate the 1.88 GHz frequency limit against system requirements. Assess thermal management needs due to LDMOS characteristics. Compare package dimensions with PCB layout constraints. Review gain specifications for signal amplification adequacy.

Part Context

This part belongs to MACOM's LDMOS RF FET family, targeting wireless infrastructure. It complements other high-power transistors like the PTFB212503FL-V2-R0. The H-37275-6/2 package provides robust mechanical support for RF modules.

Replacement Considerations

Check for direct substitutes within MACOM's LDMOS portfolio. Verify pinout compatibility if cross-referencing with similar packages. Ensure frequency and voltage ratings meet or exceed original specifications.

PTFB183404F-V2-R0PTFB183404F-V2-R0

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