PTFB191501FV1R250XTMA1

Overview

The PTFB191501FV1R250XTMA1 is a thermally-enhanced high-power RF LDMOS FET designed for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz. It features broadband internal matching, integrated ESD protection (HBM Class 2), and an earless flange package. At 1990 MHz with 30 V drain bias, it delivers 150 W CW output power at P–1dB with 55% efficiency. Two-carrier WCDMA performance yields 35 W average output power, 18 dB linear gain, 30% efficiency, and –35 dBc intermodulation distortion.

Feature Summary

• Broadband internal input and output matching
• Thermally-enhanced package with slotted and earless flanges
• Integrated electrostatic discharge protection

Applications

• Single-carrier WCDMA base station amplifiers
• Two-carrier WCDMA base station amplifiers
• CDMA base station amplifiers

Procurement Notes

Verify the component status as discontinued by Infineon Technologies. Confirm availability through authorized distributors or secondary markets. Ensure the specific ordering suffix matches the required tape and reel shipping format. Validate that the package variant corresponds to the H-37248-2 earless flange configuration.

Selection Notes

Select this device for RF power amplifier designs operating within the 1930 to 1990 MHz frequency range. The integrated matching network simplifies circuit design for WCDMA and CDMA applications. Consider the thermal resistance characteristics when designing heat dissipation solutions for high-power continuous wave operations.

Part Context

This component belongs to the PTFB191501E/F series of high-power RF LDMOS transistors manufactured using Infineon's advanced LDMOS process technology. The series provides excellent thermal stability and superior reliability for demanding wireless communication infrastructure applications.

Replacement Considerations

Infineon has officially discontinued this product line. Consult official replacement guidelines or contact authorized distributors for current availability and potential alternative components.

FAQ

What is the maximum drain-source breakdown voltage?

The maximum drain-source breakdown voltage is 65 V.

Does the device include built-in electrostatic discharge protection?

Yes, the device includes integrated ESD protection rated at Human Body Model Class 2 minimum.

What is the typical linear gain at 1990 MHz under two-carrier WCDMA conditions?

The typical linear gain is 18 dB at 1990 MHz with a 30 V drain supply.