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The PTFB191501FV1XWSA1 is a discontinued 150-watt LDMOS FET designed for single- and two-carrier WCDMA and CDMA applications from 1930 to 1990 MHz. It features broadband internal matching, thermally-enhanced packaging with slotted and earless flanges, and integrated ESD protection. Typical performance at 1990 MHz and 30 V includes 35 W average output power, 18 dB linear gain, 30% efficiency, and -35 dBc intermodulation distortion for two-carrier WCDMA.
This component is officially listed as discontinued by Infineon Technologies. Verify current availability status directly with authorized distributors or the manufacturer before design finalization. Confirm that the specific ordering suffix matches the required package variant (H-37248-2) and shipping format. Ensure compliance with RoHS standards and handle as an electrostatic discharge sensitive device during assembly.
Select this device for RF power amplifier designs operating within the 1930 to 1990 MHz frequency band. The part provides high linearity and thermal stability suitable for multi-carrier modulation schemes. Evaluate the need for external biasing networks based on the reference circuit provided in the datasheet. Consider the increased negative gate-source voltage capability if utilizing Doherty amplifier architectures.
The PTFB191501FV1XWSA1 belongs to the PTFB191501E/F series of high-power RF LDMOS transistors manufactured using Infineon's advanced LDMOS process technology. These devices are engineered specifically for telecommunications infrastructure requiring robust thermal performance and superior reliability in demanding RF environments.
No public confirmed substitute part numbers are available in the official documentation. As the product is discontinued, consult Infineon for potential obsolescence management options or alternative technologies.