PTFB201402FC-V1-R250

Overview

The PTFB201402FC-V1-R250 is an RF MOSFET manufactured by MACOM Technology Solutions. It operates at a frequency of 2.02GHz with a gain of 16dB. The device supports a drain-source voltage of 28V and a continuous drain current of 500mA. It delivers 20W of power output and is housed in the H-37248-4 package.

Feature Summary

• RF MOSFET LDMOS technology
• High power output capability
• Surface mount packaging

Applications

• RF power amplification
• Wireless communication systems
• Broadband infrastructure

Procurement Notes

Verify the exact part number suffix to ensure correct configuration, as variations may exist within the product family. Confirm that the H-37248-4 package matches your PCB footprint requirements. Check for RoHS compliance status if environmental regulations apply to your specific manufacturing process or end-use application.

Selection Notes

Select this component when a high-power RF solution is required at approximately 2GHz. The 28V rating and 500mA current capacity define its operational limits. Ensure thermal management strategies align with the 20W power dissipation capabilities inherent to the H-37248-4 package design.

Part Context

This part belongs to MACOM's portfolio of RF FETs and MOSFETs designed for high-performance applications. It complements other devices like the PTFB201402FC-V1-R0, sharing similar core specifications but potentially differing in packaging or minor electrical characteristics defined by the manufacturer.

Replacement Considerations

The PTFB201402FC-V1-R0 is a confirmed substitute part number with identical core specifications.