PTFB210801FA-V1-R0

Description：RF MOSFET LDMOS 28V H-37265-2
Series：-

SKU:f9f44682ea98 Category: RF FETs, MOSFETs Brand: MACOM Technology Solutions

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Product introduction

Product Detailed Parameters

Description：RF MOSFET LDMOS 28V H-37265-2
Series：-
Mfr：MACOM Technology Solutions
Package：Strip
Technology：LDMOS
Frequency：2.17GHz
Gain：18.5dB
Voltage - Test：28 V
Current Rating (Amps)：-
Noise Figure：-
Current - Test：750 mA
Power - Output：20W
Voltage - Rated：65 V
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：H-37265-2
Supplier Device Package：H-37265-2
Configuration：-

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PTFB210801FA-V1-R0

Overview

The PTFB210801FA-V1-R0 is a high-power RF amplifier utilizing LDMOS technology, designed for operation in the 2.17 GHz frequency band. It delivers a gain of 18.5 dB and is characterized by its robust power handling capabilities suitable for demanding wireless infrastructure applications. The component is currently classified as obsolete within the manufacturer's portfolio.

Feature Summary

High-power LDMOS construction for reliable RF amplification
Optimized performance at 2.17 GHz center frequency
Designed for base station transmitter modules

Applications

Base station power amplification
Wireless communication infrastructure
Broadband RF signal processing

Procurement Notes

This component is officially listed as obsolete by MACOM Technology Solutions. Procurement must rely on secondary market distributors or surplus inventory channels. Verify part authenticity and storage history carefully due to end-of-life status. No direct factory support or new production availability exists.

Selection Notes

Engineers requiring replacement components should evaluate current generation LDMOS alternatives from MACOM or other manufacturers offering similar 2.17 GHz specifications. Consider thermal management requirements and impedance matching networks compatible with modern base station architectures when transitioning from this obsolete device.

Part Context

The PTFB210801FA-V1-R0 belongs to MACOM’s legacy line of high-power LDMOS amplifiers. These devices were integral to third-generation (3G) and early fourth-generation (4G) cellular base station designs. The product family has been superseded by newer GaN and advanced LDMOS technologies offering higher efficiency and power density.