PTFB210801FA-V1-R250

Overview

The PTFB210801FA-V1-R250 is an RF MOSFET LDMOS component manufactured by MACOM Technology Solutions. It operates at a frequency of 2.17GHz with a gain of 18.5dB. The device features a drain-source breakdown voltage of 65V and utilizes the H-37265-2 package. This part is currently classified as obsolete.

Feature Summary

• LDMOS technology construction for RF applications
• High gain performance at 2.17GHz

Applications

• RF amplification in wireless systems

Procurement Notes

This component is officially listed as obsolete by the manufacturer. Procurement should focus on verifying availability through authorized distributors or secondary market channels, as standard production supply is discontinued. Verify lot dates and storage conditions carefully when sourcing from non-direct suppliers to ensure reliability.

Selection Notes

Designers requiring active replacement components should evaluate current MACOM LDMOS portfolios compatible with 2.17GHz operations. Consider parameters such as gain, breakdown voltage, and package compatibility when selecting alternatives. Consult official MACOM documentation for updated product lines that meet similar RF performance specifications.

Part Context

This device belongs to the MACOM RF FETs and MOSFETs category, specifically within the LDMOS technology segment. It is designed for high-frequency radio frequency applications, providing amplification capabilities in the VHF/UHF range using silicon-based lateral double-diffused metal oxide semiconductor structures.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.