PTFB211501E-V1-R0

Overview

The PTFB211501E-V1-R0 is a thermally-enhanced, 150-watt LDMOS FET designed for cellular power amplifier applications in the 2110–2170 MHz frequency band. It features integrated I/O matching and high gain within a thermally-enhanced ceramic open-cavity package with slotted and earless flanges. The device operates at VDD = 30 V with typical single-carrier WCDMA performance of 40 W average output power, 18 dB linear gain, 32% efficiency, and -34 dBc adjacent channel power. Under CW conditions at 2170 MHz, it delivers 150 W output power at P-1dB with 55% efficiency.

Feature Summary

• Broadband internal matching for simplified circuit design
• Thermally-enhanced ceramic open-cavity package construction
• Integrated ESD protection compliant with Human Body Model Class 2

Applications

• Cellular power amplifier modules
• WCDMA base station transmitters
• RF power amplification in the 2110–2170 MHz band

Procurement Notes

Verify component authenticity through authorized Infineon distributors or certified supply chain partners. Confirm that the ordering code matches the specific package variant (H-36248-2) and shipping format (Tape & Reel). Ensure handling precautions are strictly followed due to electrostatic discharge sensitivity. Review the official datasheet for any updates regarding product discontinuation status and availability constraints.

Selection Notes

Select this component for high-power RF applications requiring robust thermal management and integrated impedance matching. Evaluate the H-36248-2 package dimensions against the mechanical layout constraints of the target PCB assembly. Consider the junction temperature limits and thermal resistance specifications when designing the heat sinking infrastructure to maintain reliable operation under continuous wave or high peak power conditions.

Part Context

This part belongs to the PTFB series of thermally-enhanced high-power RF LDMOS FETs manufactured by Infineon Technologies. The series is engineered specifically for demanding wireless communication infrastructure. The 'V1' designation indicates the specific hardware revision, while 'R0' specifies the tape and reel packaging configuration containing fifty pieces per reel.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Consult official Infineon channels for current alternative recommendations or updated product line replacements.

FAQ

What is the maximum drain-source breakdown voltage?

The maximum drain-source breakdown voltage is 65 V.

Does the device include built-in electrostatic discharge protection?

Yes, the device includes integrated ESD protection capable of meeting Human Body Model Class 2 requirements.

What is the thermal resistance from case to junction?

The thermal resistance is 0.29 °C/W when measured at a case temperature of 70°C with 150 W CW output power.