PTFB213004F-V2-R0

PTFB213004F-V2-R0

  • Description:RF MOSFET LDMOS 30V H-37275-6
  • Series:-

SKU:53c9f291ebec Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 30V H-37275-6
  • Series:-
  • Mfr:MACOM Technology Solutions
  • Package:Strip
  • Technology:LDMOS
  • Frequency:2.17GHz
  • Gain:18dB
  • Voltage - Test:30 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:2.4 A
  • Power - Output:60W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:H-37275-6/2
  • Supplier Device Package:H-37275-6/2
  • Configuration:-

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PTFB213004F-V2-R0

Overview

The PTFB213004F-V2-R0 is an RF MOSFET manufactured by MACOM Technology Solutions, designed for high-frequency applications. It features a 30 V rating and supports a test current of 2.4 A. The device operates within a frequency range of 2.17 GHz, providing a gain of 18 dB. With an output power capability of 60 W, this N-channel LDMOS transistor is housed in an H-37275-6/2 package. It is classified as a discrete semiconductor product suitable for demanding RF environments.

Feature Summary

  • Utilizes LDMOS technology for robust RF performance
  • Provides high output power capability at microwave frequencies
  • Designed with a hermetically sealed strip-line package structure

Applications

  • Telecommunications infrastructure
  • Industrial equipment systems
  • Defense and radar applications

Procurement Notes

Verify the specific suffix V2-R0 against the manufacturer's latest documentation to ensure compatibility with required pinouts and thermal characteristics. Confirm that the H-37275-6/2 package dimensions align with your PCB layout constraints. Ensure sourcing channels provide traceability to authorized distribution networks to guarantee component authenticity and quality standards.

Selection Notes

Select this component when a 30 V bias and 60 W output power are required at 2.17 GHz. The 18 dB gain specification suits amplifier stages needing moderate signal boosting. Consider the LDMOS construction for thermal stability. Evaluate the package type against available mounting space and thermal management solutions in the target design environment.

Part Context

This part belongs to MACOM's portfolio of RF power transistors targeting telecommunications, industrial, and defense markets. It complements other active components like amplifiers and mixers in system designs. The product line emphasizes high-performance analog and RF solutions utilizing advanced semiconductor materials for reliable operation in critical applications.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided data.

PTFB213004F-V2-R0PTFB213004F-V2-R0

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